Renesas Electronics Corporation Memory IDT71V416S12Y8

Description
SRAM - Asynchronous Memory IC 4Mbit Parallel 12 ns 44-SOJ
Datasheet
Description
SRAM - Asynchronous Memory IC 4Mbit Parallel 12 ns 44-SOJ
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IDT71V416S12Y8 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 4Mbit Parallel 12 ns 44-SOJ

SRAM - Asynchronous Memory IC 4Mbit Parallel 12 ns 44-SOJ

Buy Now Datasheet
IC SRAM 4MBIT PARALLEL 44SOJ

IC SRAM 4MBIT PARALLEL 44SOJ

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number IDT71V416S12Y8 IDT71V416S12Y8
Product Name Memory Memory
Memory Category SRAM; SRAM Chip SRAM; SRAM Chip
Access Time 12 ns 12 ns
Operating Temperature 0 to 70 C (32 to 158 F)
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 448-CY14B512J2-SXI-ND - DigiKey
Infineon Technologies AG
Specs
Memory Category NVRAM; NVSRAM
Operating Temperature -40 to 85 C (-40 to 185 F)
Package Type SOIC; "8-SOIC (0.154"", 3.90mm Width)"
View Details
2 suppliers
Memory - 71V3557S80PFI - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 8 ns
Density 4500 kbits
View Details
Memory IC and Storage Component - 774-93425DMQB30 - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category Volatile; SRAM Chip
Access Time 30 ns
Cycle Time 20 ns
View Details
4 suppliers
Flash Memory - 1882878 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Bits per Word 8 bits
View Details