Renesas Electronics Corporation Memory IDT71V416S10PH

Description
SRAM - Asynchronous Memory IC 4Mb (256K x 16) Parallel 10ns 44-TSOP II
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Description
SRAM - Asynchronous Memory IC 4Mb (256K x 16) Parallel 10ns 44-TSOP II
Request a Quote
Datasheet
Datasheet Summary
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The IDT71V416S10PH is a 4Mbit (256K x 16) high-speed CMOS Static RAM designed for both commercial and industrial applications. It operates with a single 3.3V power supply and features equal access and cycle times of 10ns, making it suitable for high-speed memory needs. The device includes a chip select and output enable pin, along with bidirectional data inputs and outputs that are LVTTL-compatible. This SRAM utilizes fully static asynchronous circuitry, eliminating the need for clocks or refresh cycles. It is available in multiple package options, including a 44-pin, 400 mil plastic SOJ, a 44-pin, 400 mil TSOP Type II, and a 48-ball grid array package measuring 9mm x 9mm. The IDT71V416S10PH is characterized by low power consumption, especially when chip deselect is activated, and is designed to minimize noise with a JEDEC center power/GND pinout. Engineers considering this product should note its robust performance specifications and versatility in various applications, particularly where speed and reliability are critical.

Datasheet Summary
Powered by GS/AI

The IDT71V416S10PH is a 4Mbit (256K x 16) high-speed CMOS Static RAM designed for both commercial and industrial applications. It operates with a single 3.3V power supply and features equal access and cycle times of 10ns, making it suitable for high-speed memory needs. The device includes a chip select and output enable pin, along with bidirectional data inputs and outputs that are LVTTL-compatible. This SRAM utilizes fully static asynchronous circuitry, eliminating the need for clocks or refresh cycles. It is available in multiple package options, including a 44-pin, 400 mil plastic SOJ, a 44-pin, 400 mil TSOP Type II, and a 48-ball grid array package measuring 9mm x 9mm. The IDT71V416S10PH is characterized by low power consumption, especially when chip deselect is activated, and is designed to minimize noise with a JEDEC center power/GND pinout. Engineers considering this product should note its robust performance specifications and versatility in various applications, particularly where speed and reliability are critical.

Suppliers

Company
Product
Description
Supplier Links
Memory - IDT71V416S10PH-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Asynchronous Memory IC 4Mb (256K x 16) Parallel 10ns 44-TSOP II

SRAM - Asynchronous Memory IC 4Mb (256K x 16) Parallel 10ns 44-TSOP II

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IDT71V416S10PH - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IDT71V416S10PH
Integrated Circuits (ICs) - Memory IDT71V416S10PH
IC SRAM 4MBIT PARALLEL 44TSOP II

IC SRAM 4MBIT PARALLEL 44TSOP II

Supplier's Site
Memory - IDT71V416S10PH - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 44-TSOP II

SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 44-TSOP II

Buy Now Datasheet
IC SRAM 4MBIT PARALLEL 44TSOP II

IC SRAM 4MBIT PARALLEL 44TSOP II

Supplier's Site Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IDT71V416S10PH-ND IDT71V416S10PH IDT71V416S10PH IDT71V416S10PH
Product Name Memory Integrated Circuits (ICs) - Memory Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 4000 kbits 4000 kbits 4000 kbits 4000 kbits
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