Renesas Electronics Corporation Memory IDT71V416S10PH

Description
SRAM - Asynchronous Memory IC 4Mb (256K x 16) Parallel 10ns 44-TSOP II
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Description
SRAM - Asynchronous Memory IC 4Mb (256K x 16) Parallel 10ns 44-TSOP II
Request a Quote
Datasheet
Datasheet Summary
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The IDT71V416S10PH is a 4Mbit (256K x 16) high-speed CMOS Static RAM designed for both commercial and industrial applications. It operates with a single 3.3V power supply and features equal access and cycle times of 10ns, making it suitable for high-speed memory needs. The device includes a chip select and output enable pin, along with bidirectional data inputs and outputs that are LVTTL-compatible. This SRAM utilizes fully static asynchronous circuitry, eliminating the need for clocks or refresh cycles. It is available in multiple package options, including a 44-pin, 400 mil plastic SOJ, a 44-pin, 400 mil TSOP Type II, and a 48-ball grid array package measuring 9mm x 9mm. The IDT71V416S10PH is characterized by low power consumption, especially when chip deselect is activated, and is designed to minimize noise with a JEDEC center power/GND pinout. Engineers considering this product should note its robust performance specifications and versatility in various applications, particularly where speed and reliability are critical.

Datasheet Summary
Powered by GS/AI

The IDT71V416S10PH is a 4Mbit (256K x 16) high-speed CMOS Static RAM designed for both commercial and industrial applications. It operates with a single 3.3V power supply and features equal access and cycle times of 10ns, making it suitable for high-speed memory needs. The device includes a chip select and output enable pin, along with bidirectional data inputs and outputs that are LVTTL-compatible. This SRAM utilizes fully static asynchronous circuitry, eliminating the need for clocks or refresh cycles. It is available in multiple package options, including a 44-pin, 400 mil plastic SOJ, a 44-pin, 400 mil TSOP Type II, and a 48-ball grid array package measuring 9mm x 9mm. The IDT71V416S10PH is characterized by low power consumption, especially when chip deselect is activated, and is designed to minimize noise with a JEDEC center power/GND pinout. Engineers considering this product should note its robust performance specifications and versatility in various applications, particularly where speed and reliability are critical.

Suppliers

Company
Product
Description
Supplier Links
Memory - IDT71V416S10PH-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Asynchronous Memory IC 4Mb (256K x 16) Parallel 10ns 44-TSOP II

SRAM - Asynchronous Memory IC 4Mb (256K x 16) Parallel 10ns 44-TSOP II

Buy Now Datasheet
Memory IC and Storage Component - 774-IDT71V416S10PH - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-IDT71V416S10PH
Memory IC and Storage Component 774-IDT71V416S10PH
IC SRAM 4MBIT PARALLEL 44TSOP II Product overview: IDT71V416S10PH from Renesas Electronics Corporation is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IDT71V416S10PH can be used for catalog matching and distributor lookup.

IC SRAM 4MBIT PARALLEL 44TSOP II Product overview: IDT71V416S10PH from Renesas Electronics Corporation is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IDT71V416S10PH can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Memory - IDT71V416S10PH - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 44-TSOP II

SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 44-TSOP II

Buy Now Datasheet
IC SRAM 4MBIT PARALLEL 44TSOP II

IC SRAM 4MBIT PARALLEL 44TSOP II

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - IDT71V416S10PH - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IDT71V416S10PH
Integrated Circuits (ICs) - Memory IDT71V416S10PH
IC SRAM 4MBIT PARALLEL 44TSOP II

IC SRAM 4MBIT PARALLEL 44TSOP II

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IDT71V416S10PH-ND 774-IDT71V416S10PH IDT71V416S10PH IDT71V416S10PH IDT71V416S10PH
Product Name Memory Memory IC and Storage Component Memory Memory Integrated Circuits (ICs) - Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 4000 kbits 4000 kbits 4000 kbits 4000 kbits
Package Type TSOP; "44-TSOP (0.400"", 10.16mm Width)" TSOP; Tube 44-TSOP (0.400\", 10.16mm Width)
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5 suppliers