Renesas Electronics Corporation Memory IDT71V3577SA85BQI8

The IDT71V3577SA85BQI8 is a 3.3V synchronous SRAM with a memory configuration of 128K x 36 bits. It supports fast access times, with a maximum of 8.5ns at clock frequencies up to 87MHz. The device features a flow-through output architecture, which allows for immediate data output without internal registers, enhancing performance during read operations. It includes a burst mode capability, enabling four cycles of data output for a single address input, which can be configured for either linear or interleaved burst sequences via the LBO input. The SRAM is designed with a global write control and individual byte write enables, allowing for flexible data writing options. It operates with a 3.3V core power supply and has a power-down feature controlled by the ZZ input, ensuring low power consumption during inactive periods. The device is available in multiple package options, including a 100-pin TQFP, a 119-ball BGA, and a 165 fine pitch BGA, making it suitable for various applications. The IDT71V3577SA85BQI8 is ideal for projects requiring high-speed memory with efficient data handling capabilities.