Renesas Electronics Corporation Memory IDT71V35761YSA200BQI

Description
SRAM - Synchronous, SDR Memory IC 4.5Mb (128K x 36) Parallel 200MHz 3.1ns 165-CABGA (13x15)
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Description
SRAM - Synchronous, SDR Memory IC 4.5Mb (128K x 36) Parallel 200MHz 3.1ns 165-CABGA (13x15)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IDT71V35761YSA200BQI-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Synchronous, SDR Memory IC 4.5Mb (128K x 36) Parallel 200MHz 3.1ns 165-CABGA (13x15)

SRAM - Synchronous, SDR Memory IC 4.5Mb (128K x 36) Parallel 200MHz 3.1ns 165-CABGA (13x15)

Buy Now
Memory - IDT71V35761YSA200BQI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 200 MHz 3.1 ns 165-CABGA (13x15)

SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 200 MHz 3.1 ns 165-CABGA (13x15)

Buy Now Datasheet
IC SRAM 4.5MBIT PAR 165CABGA

IC SRAM 4.5MBIT PAR 165CABGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - IDT71V35761YSA200BQI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IDT71V35761YSA200BQI
Integrated Circuits (ICs) - Memory IDT71V35761YSA200BQI
IC SRAM 4.5MBIT PAR 165CABGA

IC SRAM 4.5MBIT PAR 165CABGA

Supplier's Site

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IDT71V35761YSA200BQI-ND IDT71V35761YSA200BQI IDT71V35761YSA200BQI IDT71V35761YSA200BQI
Product Name Memory Memory Memory Integrated Circuits (ICs) - Memory
Memory Category SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 4500 kbits 4500 kbits 4500 kbits 4500 kbits
Package Type 165-TBGA BGA; 165-TBGA BGA
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