Renesas Electronics Corporation Memory IDT71V35761SA200BQ8

The IDT71V35761SA200BQ8 is a high-speed synchronous SRAM organized as 128K x 36 bits, designed to operate with a 3.3V core power supply and 3.3V I/O. It features pipelined outputs, a burst counter, and single cycle deselect, making it suitable for applications requiring fast data access. The device supports various clock speeds, with a maximum of 200 MHz and a clock access time of 3.1 ns for commercial applications. It also offers an industrial temperature range of -40°C to +85°C for selected speeds. The SRAM includes write, data, address, and control registers, allowing for self-timed write cycles. The burst mode capability enables the device to provide four cycles of data for a single address, enhancing performance. The IDT71V35761 is available in multiple package options, including a 100-pin thin quad flatpack (TQFP), a 119 ball grid array (BGA), and a 165 fine pitch ball grid array (fBGA). Additionally, it includes an optional boundary scan JTAG interface compliant with IEEE 1149.1 and features a power-down mode controlled by the ZZ input for reduced power consumption.