Renesas Electronics Corporation Memory IDT71V35761SA183BQI8

The IDT71V35761SA183BQI8 is a 128K x 36-bit synchronous SRAM designed for high-speed applications, operating at a core voltage of 3.3V. It features a pipelined output and supports burst mode operation, allowing for efficient data access with a maximum clock frequency of 183 MHz and a clock access time of 3.3 ns. The device includes write, data, address, and control registers, enabling self-timed write cycles and global write control. This SRAM is available in multiple package options, including a 100-pin thin quad flatpack (TQFP), a 119-ball grid array (BGA), and a 165 fine pitch BGA. It operates within an industrial temperature range of -40¬8C to +85¬8C for selected speeds, making it suitable for various applications. Additionally, the device offers an optional boundary scan JTAG interface compliant with IEEE 1149.1 and includes a power-down feature controlled by the ZZ input for low power consumption.