Renesas Electronics Corporation Memory IDT71V3559SA85BQG

The IDT71V3559SA85BQG is a 3.3V synchronous SRAM with a memory configuration of 256K x 18 bits, designed for high-speed applications. It operates at a maximum speed of 100 MHz, providing a clock-to-data access time of 7.5 ns. This SRAM features Zero Bus Turnaround (ZBT,Ñ¢), which eliminates dead cycles between read and write operations, enhancing overall system performance. The device includes a burst counter that supports four-word burst capability, allowing for efficient data transfer. It has individual byte write control for each of its four bytes, enabling selective data manipulation. The IDT71V3559SA85BQG is packaged in a 165 fine pitch ball grid array (fBGA) format, adhering to JEDEC standards, which facilitates integration into compact designs. Additional features include three chip enable pins for easy depth expansion, a clock enable (CEN) pin for suspending operations, and an optional JTAG interface for boundary scan testing. The device is suitable for both commercial and industrial temperature ranges, making it versatile for various applications.