Renesas Electronics Corporation Memory IDT71V3559S80PF8

Description
SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mb (256K x 18) Parallel 8ns 100-TQFP (14x14)
Request a Quote
Description
SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mb (256K x 18) Parallel 8ns 100-TQFP (14x14)
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The IDT71V3559S80PF8 is a 3.3V synchronous SRAM with a memory configuration of 256K x 18 bits, designed for high-speed applications. It operates at a maximum frequency of 100 MHz, providing a clock-to-data access time of 7.5 ns. This SRAM features the Zero Bus Turnaround (ZBT,Ñ¢) capability, which eliminates dead cycles between read and write operations, enhancing overall system performance. The device includes a burst counter that supports a four-word burst capability, allowing for efficient data transfer. It has individual byte write control for each of its four bytes, enabling selective data manipulation. The SRAM is packaged in a JEDEC standard 100-pin thin quad flatpack (TQFP), making it suitable for various applications requiring compact designs. Additional features include three chip enable pins for easy depth expansion, a clock enable (CEN) pin to suspend operations, and an optional JTAG interface for boundary scan testing. The IDT71V3559S80PF8 is suitable for commercial and industrial temperature ranges, making it versatile for different environments.

Datasheet Summary
Powered by GS/AI

The IDT71V3559S80PF8 is a 3.3V synchronous SRAM with a memory configuration of 256K x 18 bits, designed for high-speed applications. It operates at a maximum frequency of 100 MHz, providing a clock-to-data access time of 7.5 ns. This SRAM features the Zero Bus Turnaround (ZBT,Ñ¢) capability, which eliminates dead cycles between read and write operations, enhancing overall system performance. The device includes a burst counter that supports a four-word burst capability, allowing for efficient data transfer. It has individual byte write control for each of its four bytes, enabling selective data manipulation. The SRAM is packaged in a JEDEC standard 100-pin thin quad flatpack (TQFP), making it suitable for various applications requiring compact designs. Additional features include three chip enable pins for easy depth expansion, a clock enable (CEN) pin to suspend operations, and an optional JTAG interface for boundary scan testing. The IDT71V3559S80PF8 is suitable for commercial and industrial temperature ranges, making it versatile for different environments.

Suppliers

Company
Product
Description
Supplier Links
Memory - IDT71V3559S80PF8-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mb (256K x 18) Parallel 8ns 100-TQFP (14x14)

SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mb (256K x 18) Parallel 8ns 100-TQFP (14x14)

Buy Now
IC SRAM 4.5MBIT PARALLEL 100TQFP

IC SRAM 4.5MBIT PARALLEL 100TQFP

Supplier's Site Datasheet
Memory - IDT71V3559S80PF8 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mbit Parallel 8 ns 100-TQFP (14x14)

SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mbit Parallel 8 ns 100-TQFP (14x14)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IDT71V3559S80PF8 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IDT71V3559S80PF8
Integrated Circuits (ICs) - Memory IDT71V3559S80PF8
IC SRAM 4.5MBIT PARALLEL 100TQFP

IC SRAM 4.5MBIT PARALLEL 100TQFP

Supplier's Site

Technical Specifications

  DigiKey Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IDT71V3559S80PF8-ND IDT71V3559S80PF8 IDT71V3559S80PF8 IDT71V3559S80PF8
Product Name Memory Memory Memory Integrated Circuits (ICs) - Memory
Memory Category SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 4500 kbits 4500 kbits 4500 kbits 4500 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1712222P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Density 1024000 kbits
Package Type SOIC; SOIC
View Details
 - JM38510/23106BEA - Rochester Electronics
Specs
Memory Category SRAM Chip
View Details
3 suppliers
Memory - 71V124SA12TYGI - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Density 1000 kbits
View Details
Memory - AS5LC1008 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SRAM; SRAM Chip
Access Time 10 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details