Renesas Electronics Corporation Memory IDT71V3558SA133BG

The IDT71V3558SA133BG is a 3.3V synchronous SRAM with a memory configuration of 256K x 18 bits, designed for high-speed applications. It features a Zero Bus Turnaround (ZBT) architecture, which eliminates dead bus cycles during read and write operations, enhancing overall system performance. The device operates at speeds up to 200 MHz, with a clock-to-data access time of 3.2 ns. This SRAM includes a burst counter that allows for four cycles of data output for a single address, with the burst order selectable between linear and interleaved via the LBO pin. It supports individual byte write controls and has three chip enable pins for easy depth expansion. The device is packaged in a JEDEC standard 100-pin thin quad flatpack (TQFP), 119-ball grid array (BGA), and 165 fine pitch ball grid array (fBGA), making it versatile for various applications. The IDT71V3558SA133BG is suitable for systems requiring high-speed memory with efficient data handling capabilities, particularly in applications where minimizing latency is critical.