Renesas Electronics Corporation Memory IDT71V3558S166BGI8

Description
SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mbit Parallel 166 MHz 3.5 ns 119-PBGA (14x22)
Datasheet
Description
SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mbit Parallel 166 MHz 3.5 ns 119-PBGA (14x22)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IDT71V3558S166BGI8 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mbit Parallel 166 MHz 3.5 ns 119-PBGA (14x22)

SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mbit Parallel 166 MHz 3.5 ns 119-PBGA (14x22)

Buy Now Datasheet
IC SRAM 4.5MBIT PARALLEL 119PBGA

IC SRAM 4.5MBIT PARALLEL 119PBGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number IDT71V3558S166BGI8 IDT71V3558S166BGI8
Product Name Memory Memory
Memory Category SRAM; SRAM Chip SRAM; SRAM Chip
Access Time 3.5 ns 3.5 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS5SS256K36 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SSRAM; SRAM Chip
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 2048 kbits
View Details
Memory IC and Storage Component - 774-CY62126DV30LL-55BVI - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category Volatile; SRAM Chip
Access Time 55 ns
Cycle Time 55 ns
View Details
Memory - SRAM - 71V256SA10YG - 907816-71V256SA10YG - Win Source Electronics
Specs
Memory Category SRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F)
Package Type SOJ; 28-SOJ
View Details
3 suppliers
Memory - S29GL032N11TFIV10 - Quarktwin Technology Ltd.
Specs
Memory Category Flash; FLASH
Access Time 110 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
View Details