Renesas Electronics Corporation Memory IDT71V256SA10YI

Description
SRAM - Asynchronous Memory IC 256Kb (32K x 8) Parallel 10ns 28-SOJ
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Description
SRAM - Asynchronous Memory IC 256Kb (32K x 8) Parallel 10ns 28-SOJ
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Datasheet
Datasheet Summary
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The IDT71V256SA10YI is a 256Kbit (32K x 8-bit) high-speed static RAM designed for high-performance applications, particularly as a secondary cache for processors. It operates with a single 3.3V (¬±0.3V) power supply and is available in both commercial (0¬8C to +70¬8C) and industrial (,Äì40¬8C to +85¬8C) temperature ranges. The device features fast access times of 12ns, making it suitable for demanding desktop designs. This SRAM is built using advanced high-performance CMOS technology, ensuring low power consumption with a maximum standby current of 2mA. It is packaged in space-efficient 28-pin SOJ and TSOP Type I formats, which facilitate compact layouts in electronic designs. The inputs and outputs are LVTTL-compatible, enhancing integration with various digital systems. The IDT71V256SA10YI is also available in green options, aligning with environmentally friendly design practices.

Datasheet Summary
Powered by GS/AI

The IDT71V256SA10YI is a 256Kbit (32K x 8-bit) high-speed static RAM designed for high-performance applications, particularly as a secondary cache for processors. It operates with a single 3.3V (¬±0.3V) power supply and is available in both commercial (0¬8C to +70¬8C) and industrial (,Äì40¬8C to +85¬8C) temperature ranges. The device features fast access times of 12ns, making it suitable for demanding desktop designs. This SRAM is built using advanced high-performance CMOS technology, ensuring low power consumption with a maximum standby current of 2mA. It is packaged in space-efficient 28-pin SOJ and TSOP Type I formats, which facilitate compact layouts in electronic designs. The inputs and outputs are LVTTL-compatible, enhancing integration with various digital systems. The IDT71V256SA10YI is also available in green options, aligning with environmentally friendly design practices.

Suppliers

Company
Product
Description
Supplier Links
Memory - IDT71V256SA10YI-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Asynchronous Memory IC 256Kb (32K x 8) Parallel 10ns 28-SOJ

SRAM - Asynchronous Memory IC 256Kb (32K x 8) Parallel 10ns 28-SOJ

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IDT71V256SA10YI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IDT71V256SA10YI
Integrated Circuits (ICs) - Memory IDT71V256SA10YI
IC SRAM 256KBIT PARALLEL 28SOJ

IC SRAM 256KBIT PARALLEL 28SOJ

Supplier's Site
IC SRAM 256KBIT PARALLEL 28SOJ

IC SRAM 256KBIT PARALLEL 28SOJ

Supplier's Site Datasheet
Memory - IDT71V256SA10YI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 256Kbit Parallel 10 ns 28-SOJ

SRAM - Asynchronous Memory IC 256Kbit Parallel 10 ns 28-SOJ

Buy Now Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IDT71V256SA10YI-ND IDT71V256SA10YI IDT71V256SA10YI IDT71V256SA10YI
Product Name Memory Integrated Circuits (ICs) - Memory Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Package Type "28-BSOJ (0.300"", 7.62mm Width)" SOJ 28-BSOJ (0.300\", 7.62mm Width)
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