Renesas Electronics Corporation Memory IDT71V2559S75PFG8

The IDT71V2559S75PFG8 is a 3.3V synchronous SRAM with a memory configuration of 256K x 18 bits, designed for high-speed applications. It features a Zero Bus Turnaround (ZBT,Ñ¢) architecture, which eliminates dead cycles between read and write operations, enhancing overall system performance. The device supports a maximum clock frequency of 100 MHz, with a clock-to-data access time of 7.5 ns. This SRAM includes a burst counter that allows for four cycles of data output for a single address, with the burst order selectable between linear and interleaved via the LBO pin. It has individual byte write control for each of the four bytes, enabling flexible data handling. The device is packaged in a JEDEC standard 100-pin thin quad flatpack (TQFP), as well as in BGA and fine pitch BGA formats, making it suitable for various design requirements. The IDT71V2559S75PFG8 operates with a core power supply of 3.3V and a 2.5V I/O supply, accommodating a ¬±5% tolerance. It is available for both commercial and industrial temperature ranges, making it versatile for different applications.