Renesas Electronics Corporation Memory IDT71V2558S166BG8

Description
SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mbit Parallel 166 MHz 3.5 ns 119-PBGA (14x22)
Description
SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mbit Parallel 166 MHz 3.5 ns 119-PBGA (14x22)
Datasheet
Datasheet Summary
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The IDT71V2558S166BG8 is a 3.3V synchronous ZBT,Ñ¢ SRAM with a memory configuration of 256K x 18 bits, designed for high-speed applications. It supports a clock frequency of up to 166 MHz, providing a clock-to-data access time of 3.5 ns. The ZBT,Ñ¢ feature allows for zero bus turnaround, eliminating dead cycles between read and write operations, which enhances overall system performance. This memory device includes a burst counter and pipelined outputs, enabling it to deliver four cycles of data for a single address in either linear or interleaved burst modes. It features individual byte write controls for flexible data handling and has three chip enable pins for easy device deselection and depth expansion. The IDT71V2558S166BG8 is available in multiple package options, including a 119-ball grid array (BGA) and a 100-pin thin quad flatpack (TQFP), making it suitable for various applications in both commercial and industrial temperature ranges.

Datasheet Summary
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The IDT71V2558S166BG8 is a 3.3V synchronous ZBT,Ñ¢ SRAM with a memory configuration of 256K x 18 bits, designed for high-speed applications. It supports a clock frequency of up to 166 MHz, providing a clock-to-data access time of 3.5 ns. The ZBT,Ñ¢ feature allows for zero bus turnaround, eliminating dead cycles between read and write operations, which enhances overall system performance. This memory device includes a burst counter and pipelined outputs, enabling it to deliver four cycles of data for a single address in either linear or interleaved burst modes. It features individual byte write controls for flexible data handling and has three chip enable pins for easy device deselection and depth expansion. The IDT71V2558S166BG8 is available in multiple package options, including a 119-ball grid array (BGA) and a 100-pin thin quad flatpack (TQFP), making it suitable for various applications in both commercial and industrial temperature ranges.

Suppliers

Company
Product
Description
Supplier Links
Memory - IDT71V2558S166BG8 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mbit Parallel 166 MHz 3.5 ns 119-PBGA (14x22)

SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mbit Parallel 166 MHz 3.5 ns 119-PBGA (14x22)

Buy Now Datasheet
IC SRAM 4.5MBIT PARALLEL 119PBGA

IC SRAM 4.5MBIT PARALLEL 119PBGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number IDT71V2558S166BG8 IDT71V2558S166BG8
Product Name Memory Memory
Memory Category SRAM; SRAM Chip SRAM; SRAM Chip
Access Time 3.5 ns 3.5 ns
Operating Temperature 0 to 70 C (32 to 158 F)
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