Renesas Electronics Corporation Memory IDT71V2558S166BG8

The IDT71V2558S166BG8 is a 3.3V synchronous ZBT,Ñ¢ SRAM with a memory configuration of 256K x 18 bits, designed for high-speed applications. It supports a clock frequency of up to 166 MHz, providing a clock-to-data access time of 3.5 ns. The ZBT,Ñ¢ feature allows for zero bus turnaround, eliminating dead cycles between read and write operations, which enhances overall system performance. This memory device includes a burst counter and pipelined outputs, enabling it to deliver four cycles of data for a single address in either linear or interleaved burst modes. It features individual byte write controls for flexible data handling and has three chip enable pins for easy device deselection and depth expansion. The IDT71V2558S166BG8 is available in multiple package options, including a 119-ball grid array (BGA) and a 100-pin thin quad flatpack (TQFP), making it suitable for various applications in both commercial and industrial temperature ranges.