Renesas Electronics Corporation Memory IDT71V124SA20YI

Description
SRAM - Asynchronous Memory IC 1Mb (128K x 8) Parallel 20ns 32-SOJ
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Description
SRAM - Asynchronous Memory IC 1Mb (128K x 8) Parallel 20ns 32-SOJ
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Datasheet
Datasheet Summary
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The IDT71V124SA20YI is a 1 Megabit (128K x 8-bit) high-speed static RAM, designed for applications requiring fast memory access. It operates on a single 3.3V supply and features a center power and ground pinout, which helps reduce noise and improve overall system performance. The device supports access times of 20ns, with a maximum operating current of 100mA and a low power consumption mode when deselected. This SRAM is fully static and asynchronous, meaning it does not require clock signals or refresh cycles for operation. It is compatible with LVTTL logic levels, making it suitable for modern digital systems. The IDT71V124SA20YI is available in multiple package options, including 32-pin SOJ and TSOP, catering to various design requirements. It is offered in both commercial and industrial temperature ranges, from 0¬8C to +70¬8C and -40¬8C to +85¬8C, respectively, making it versatile for different environmental conditions.

Datasheet Summary
Powered by GS/AI

The IDT71V124SA20YI is a 1 Megabit (128K x 8-bit) high-speed static RAM, designed for applications requiring fast memory access. It operates on a single 3.3V supply and features a center power and ground pinout, which helps reduce noise and improve overall system performance. The device supports access times of 20ns, with a maximum operating current of 100mA and a low power consumption mode when deselected. This SRAM is fully static and asynchronous, meaning it does not require clock signals or refresh cycles for operation. It is compatible with LVTTL logic levels, making it suitable for modern digital systems. The IDT71V124SA20YI is available in multiple package options, including 32-pin SOJ and TSOP, catering to various design requirements. It is offered in both commercial and industrial temperature ranges, from 0¬8C to +70¬8C and -40¬8C to +85¬8C, respectively, making it versatile for different environmental conditions.

Suppliers

Company
Product
Description
Supplier Links
Memory - IDT71V124SA20YI-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Asynchronous Memory IC 1Mb (128K x 8) Parallel 20ns 32-SOJ

SRAM - Asynchronous Memory IC 1Mb (128K x 8) Parallel 20ns 32-SOJ

Buy Now Datasheet
Memory - IDT71V124SA20YI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 1Mbit Parallel 20 ns 32-SOJ

SRAM - Asynchronous Memory IC 1Mbit Parallel 20 ns 32-SOJ

Buy Now Datasheet
IC SRAM 1MBIT PARALLEL 32SOJ

IC SRAM 1MBIT PARALLEL 32SOJ

Supplier's Site
Integrated Circuits (ICs) - Memory - IDT71V124SA20YI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IDT71V124SA20YI
Integrated Circuits (ICs) - Memory IDT71V124SA20YI
IC SRAM 1MBIT PARALLEL 32SOJ

IC SRAM 1MBIT PARALLEL 32SOJ

Supplier's Site

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IDT71V124SA20YI-ND IDT71V124SA20YI IDT71V124SA20YI IDT71V124SA20YI
Product Name Memory Memory Memory Integrated Circuits (ICs) - Memory
Memory Category SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 1000 kbits 1000 kbits 1000 kbits 1000 kbits
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