Renesas Electronics Corporation Memory IDT71T75902S75PF8

The IDT71T75902S75PF8 is a 2.5V synchronous SRAM with a memory configuration of 512K x 36 bits or 1M x 18 bits, designed for high-speed applications with a maximum operating frequency of 100 MHz and a clock-to-data access time of 7.5 ns. It features Zero Bus Turnaround (ZBT) technology, which eliminates dead cycles between read and write operations, enhancing overall system performance. This memory device includes an internally synchronized output buffer, allowing for simplified control without the need for an output enable signal. It supports a single read/write control pin and offers a four-word burst capability, which can be configured for either interleaved or linear burst sequences. The device also provides individual byte write control for flexible data handling. The IDT71T75902S75PF8 is packaged in a JEDEC standard 100-pin thin quad flatpack (TQFP) or a 119-ball grid array (BGA), making it suitable for various applications. It operates with a power supply of 2.5V (±5%) and includes a power-down feature controlled by the ZZ input, ensuring low power consumption during idle periods. Additionally, it complies with the IEEE 1149.1 JTAG standard for boundary scan testing.