Renesas Electronics Corporation Memory IDT71T75802S100PFGI

Description
SRAM - Synchronous, SDR (ZBT) Memory IC 18Mb (1M x 18) Parallel 100MHz 5ns 100-TQFP (14x14)
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Description
SRAM - Synchronous, SDR (ZBT) Memory IC 18Mb (1M x 18) Parallel 100MHz 5ns 100-TQFP (14x14)
Request a Quote
Datasheet
Datasheet Summary
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The IDT71T75802S100PFGI is a 2.5V synchronous SRAM with a memory configuration of 512K x 36 bits, designed for high-speed applications with a maximum operating frequency of 200 MHz. It features Zero Bus Turnaround (ZBT) technology, which eliminates dead cycles between read and write operations, enhancing overall system performance. The device includes a single read/write control pin and supports pipelined outputs with positive clock-edge triggering for address, data, and control signals. This SRAM also incorporates a burst counter, allowing for four-word burst capability in either linear or interleaved modes. It has three chip enable pins for easy depth expansion and individual byte write control. The part is packaged in a JEDEC standard 100-pin thin quad flatpack (TQFP) and is available in an industrial temperature range of -40¬8C to +85¬8C. Additionally, it includes a boundary scan JTAG interface compliant with IEEE 1149.1 and offers power-down control via the ZZ input.

Datasheet Summary
Powered by GS/AI

The IDT71T75802S100PFGI is a 2.5V synchronous SRAM with a memory configuration of 512K x 36 bits, designed for high-speed applications with a maximum operating frequency of 200 MHz. It features Zero Bus Turnaround (ZBT) technology, which eliminates dead cycles between read and write operations, enhancing overall system performance. The device includes a single read/write control pin and supports pipelined outputs with positive clock-edge triggering for address, data, and control signals. This SRAM also incorporates a burst counter, allowing for four-word burst capability in either linear or interleaved modes. It has three chip enable pins for easy depth expansion and individual byte write control. The part is packaged in a JEDEC standard 100-pin thin quad flatpack (TQFP) and is available in an industrial temperature range of -40¬8C to +85¬8C. Additionally, it includes a boundary scan JTAG interface compliant with IEEE 1149.1 and offers power-down control via the ZZ input.

Suppliers

Company
Product
Description
Supplier Links
Memory - IDT71T75802S100PFGI-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Synchronous, SDR (ZBT) Memory IC 18Mb (1M x 18) Parallel 100MHz 5ns 100-TQFP (14x14)

SRAM - Synchronous, SDR (ZBT) Memory IC 18Mb (1M x 18) Parallel 100MHz 5ns 100-TQFP (14x14)

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Integrated Circuits (ICs) - Memory - IDT71T75802S100PFGI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IDT71T75802S100PFGI
Integrated Circuits (ICs) - Memory IDT71T75802S100PFGI
IC SRAM 18MBIT PARALLEL 100TQFP

IC SRAM 18MBIT PARALLEL 100TQFP

Supplier's Site
IC SRAM 18MBIT PARALLEL 100TQFP

IC SRAM 18MBIT PARALLEL 100TQFP

Supplier's Site Datasheet
Memory - IDT71T75802S100PFGI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR (ZBT) Memory IC 18Mbit Parallel 100 MHz 5 ns 100-TQFP (14x14)

SRAM - Synchronous, SDR (ZBT) Memory IC 18Mbit Parallel 100 MHz 5 ns 100-TQFP (14x14)

Buy Now Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IDT71T75802S100PFGI-ND IDT71T75802S100PFGI IDT71T75802S100PFGI IDT71T75802S100PFGI
Product Name Memory Integrated Circuits (ICs) - Memory Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 18000 kbits 18000 kbits 18000 kbits 18000 kbits
Package Type TQFP; 100-LQFP QFP QFP; 100-LQFP
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