Renesas Electronics Corporation Memory IDT71T75602S200PFG8

Description
SRAM - Synchronous, SDR (ZBT) Memory IC 18Mb (512K x 36) Parallel 200MHz 3.2ns 100-TQFP (14x14)
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Description
SRAM - Synchronous, SDR (ZBT) Memory IC 18Mb (512K x 36) Parallel 200MHz 3.2ns 100-TQFP (14x14)
Request a Quote
Datasheet
Datasheet Summary
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The IDT71T75602S200PFG8 is a 2.5V synchronous SRAM with a memory configuration of 512K x 36 bits, designed for high-speed applications with a maximum operating frequency of 200 MHz and a clock-to-data access time of 3.2 ns. It features Zero Bus Turnaround (ZBT) technology, which eliminates dead cycles between read and write operations, enhancing overall system performance. The device includes an internally synchronized output buffer enable, simplifying control by removing the need for an output enable (OE) signal. This SRAM supports a single read/write control pin and offers a four-word burst capability, allowing for efficient data transfer in either interleaved or linear modes. It is packaged in a JEDEC standard 100-pin thin quad flatpack (TQFP) and is available in both commercial and industrial temperature ranges, with an operating temperature range of -40¬8C to +85¬8C for selected speeds. The part also includes a boundary scan JTAG interface for testing and debugging purposes.

Datasheet Summary
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The IDT71T75602S200PFG8 is a 2.5V synchronous SRAM with a memory configuration of 512K x 36 bits, designed for high-speed applications with a maximum operating frequency of 200 MHz and a clock-to-data access time of 3.2 ns. It features Zero Bus Turnaround (ZBT) technology, which eliminates dead cycles between read and write operations, enhancing overall system performance. The device includes an internally synchronized output buffer enable, simplifying control by removing the need for an output enable (OE) signal. This SRAM supports a single read/write control pin and offers a four-word burst capability, allowing for efficient data transfer in either interleaved or linear modes. It is packaged in a JEDEC standard 100-pin thin quad flatpack (TQFP) and is available in both commercial and industrial temperature ranges, with an operating temperature range of -40¬8C to +85¬8C for selected speeds. The part also includes a boundary scan JTAG interface for testing and debugging purposes.

Suppliers

Company
Product
Description
Supplier Links
Memory - IDT71T75602S200PFG8-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Synchronous, SDR (ZBT) Memory IC 18Mb (512K x 36) Parallel 200MHz 3.2ns 100-TQFP (14x14)

SRAM - Synchronous, SDR (ZBT) Memory IC 18Mb (512K x 36) Parallel 200MHz 3.2ns 100-TQFP (14x14)

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Memory - IDT71T75602S200PFG8 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR (ZBT) Memory IC 18Mbit Parallel 200 MHz 3.2 ns 100-TQFP (14x14)

SRAM - Synchronous, SDR (ZBT) Memory IC 18Mbit Parallel 200 MHz 3.2 ns 100-TQFP (14x14)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IDT71T75602S200PFG8 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IDT71T75602S200PFG8
Integrated Circuits (ICs) - Memory IDT71T75602S200PFG8
IC SRAM 18MBIT PARALLEL 100TQFP

IC SRAM 18MBIT PARALLEL 100TQFP

Supplier's Site
IC SRAM 18MBIT PARALLEL 100TQFP

IC SRAM 18MBIT PARALLEL 100TQFP

Supplier's Site Datasheet

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IDT71T75602S200PFG8-ND IDT71T75602S200PFG8 IDT71T75602S200PFG8 IDT71T75602S200PFG8
Product Name Memory Memory Integrated Circuits (ICs) - Memory Memory
Memory Category SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 18000 kbits 18000 kbits 18000 kbits 18000 kbits
Package Type TQFP; 100-LQFP QFP; 100-LQFP QFP
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