Renesas Electronics Corporation Memory IDT71T75602S200PF

The IDT71T75602S200PF is a 2.5V synchronous SRAM with a capacity of 18,874,368 bits, organized as 512K x 36 or 1M x 18. It operates at a high speed of 200 MHz, providing a clock-to-data access time of 3.2 ns. This memory device features Zero Bus Turnaround (ZBT,Ñ¢), which eliminates dead cycles between read and write operations, enhancing overall performance. The SRAM includes a single read/write control pin and supports pipelined applications with positive clock-edge triggering for address, data, and control signals. It also has a burst capability that allows for four-word data transfers in either linear or interleaved order, controlled by the ADV/LD signal. The device is packaged in a JEDEC standard 100-pin thin quad flatpack (TQFP) or a 119-ball grid array (BGA), making it suitable for various applications. Additional features include individual byte write control, three chip enable pins for easy depth expansion, and a power-down mode controlled by the ZZ input. The IDT71T75602S200PF is available in both commercial and industrial temperature ranges, with an option for green parts.