Renesas Electronics Corporation Memory IDT71P72804S167BQI

Description
SRAM - Synchronous, QDR II Memory IC 18Mb (1M x 18) Parallel 167MHz 8.4ns 165-CABGA (13x15)
Request a Quote Datasheet
Description
SRAM - Synchronous, QDR II Memory IC 18Mb (1M x 18) Parallel 167MHz 8.4ns 165-CABGA (13x15)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IDT71P72804S167BQI-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Synchronous, QDR II Memory IC 18Mb (1M x 18) Parallel 167MHz 8.4ns 165-CABGA (13x15)

SRAM - Synchronous, QDR II Memory IC 18Mb (1M x 18) Parallel 167MHz 8.4ns 165-CABGA (13x15)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IDT71P72804S167BQI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IDT71P72804S167BQI
Integrated Circuits (ICs) - Memory IDT71P72804S167BQI
IC SRAM 18MBIT PARALLEL 165CABGA

IC SRAM 18MBIT PARALLEL 165CABGA

Supplier's Site
IC SRAM 18MBIT PARALLEL 165CABGA

IC SRAM 18MBIT PARALLEL 165CABGA

Supplier's Site Datasheet
Memory - IDT71P72804S167BQI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, QDR II Memory IC 18Mbit Parallel 167 MHz 8.4 ns 165-CABGA (13x15)

SRAM - Synchronous, QDR II Memory IC 18Mbit Parallel 167 MHz 8.4 ns 165-CABGA (13x15)

Buy Now Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IDT71P72804S167BQI-ND IDT71P72804S167BQI IDT71P72804S167BQI IDT71P72804S167BQI
Product Name Memory Integrated Circuits (ICs) - Memory Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 18000 kbits 18000 kbits 18000 kbits 18000 kbits
Package Type 165-TBGA BGA BGA; 165-TBGA
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