Renesas Electronics Corporation Memory IDT71P72604S167BQGI

The IDT71P72604S167BQGI is an 18Mb QDR II SRAM featuring a burst of two architecture, designed for high-speed synchronous memory applications. It supports independent read and write data ports, allowing for concurrent transactions and maximizing throughput. The device operates with a core voltage of 1.8V and is available in a 165-ball fine pitch ball grid array (fBGA) package measuring 13mm x 15mm. This SRAM supports dual echo clock outputs and utilizes a DDR multiplexed address bus, enabling two-word bursts on all accesses. It can handle four data word transfers per clock cycle, providing quad-data-rate performance. The device is compatible with HSTL inputs, which can be scaled to receive signals from 1.4V to 1.9V, and features adjustable output impedance from 35 ohms to 70 ohms. The IDT71P72604S167BQGI is suitable for both commercial and industrial temperature ranges, making it versatile for various applications. Its design simplifies system integration by eliminating the need for bi-directional buses, thus optimizing signal integrity at high speeds.