Renesas Electronics Corporation Memory IDT71P72604S167BQG

The IDT71P72604S167BQG is an 18Mb QDR II SRAM featuring a 512K x 36-bit architecture. It operates at a core voltage of 1.8V and supports clock frequencies up to 167 MHz. This memory device provides independent read and write data ports, allowing for simultaneous access and enhancing throughput with a quad-data-rate performance. It supports two-word bursts on all SRAM accesses, enabling four data word transfers per clock cycle. The device is designed with HSTL inputs that can accommodate voltage levels from 1.4V to 1.9V, and it features scalable output drivers with adjustable output impedance from 35 ohms to 70 ohms. The QDR II SRAM includes echo clock outputs that are closely aligned with the data outputs, improving timing accuracy for downstream applications. It is available in a 165-ball, 1.0mm pitch, 13mm x 15mm fine-pitch ball grid array (fBGA) package, suitable for both commercial and industrial temperature ranges. This product is ideal for applications requiring high-speed memory with efficient data handling capabilities.