Renesas Electronics Corporation Memory IDT71P71604S167BQ

The IDT71P71604S167BQ is an 18Mb DDR II SRAM with a burst of 2, designed for high-speed synchronous memory applications. It features a common read and write data port, allowing for one read or write request per clock cycle. The device supports dual echo clock outputs and utilizes a multiplexed address bus. It operates with a core voltage of 1.8V and is packaged in a 165-ball fine pitch ball grid array (fBGA) measuring 13mm x 15mm. This SRAM supports a variety of data widths, specifically 512K x 36 bits, and is capable of handling DDR data rates, maximizing bandwidth by transferring two data items per clock cycle. The device includes HSTL inputs that can be scaled to receive signals from 1.4V to 1.9V, and it features adjustable output impedance from 35 ohms to 70 ohms, allowing for flexibility in interfacing with different systems. The IDT71P71604S167BQ is suitable for applications requiring high-speed data processing and efficient memory management.