Renesas Electronics Corporation Memory IDT70P3337S233RM

Description
SRAM - Dual Port, Synchronous QDR II Memory IC 9Mbit Parallel 233 MHz 7.2 ns 576-FCBGA (25x25)
Datasheet
Description
SRAM - Dual Port, Synchronous QDR II Memory IC 9Mbit Parallel 233 MHz 7.2 ns 576-FCBGA (25x25)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IDT70P3337S233RM - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Dual Port, Synchronous QDR II Memory IC 9Mbit Parallel 233 MHz 7.2 ns 576-FCBGA (25x25)

SRAM - Dual Port, Synchronous QDR II Memory IC 9Mbit Parallel 233 MHz 7.2 ns 576-FCBGA (25x25)

Buy Now Datasheet
IC SRAM 9MBIT PARALLEL 576FCBGA

IC SRAM 9MBIT PARALLEL 576FCBGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number IDT70P3337S233RM IDT70P3337S233RM
Product Name Memory Memory
Memory Category SRAM; SRAM Chip SRAM; SRAM Chip
Access Time 7.2 ns 7.2 ns
Operating Temperature 0 to 70 C (32 to 158 F)
Unlock Full Specs
to access all available technical data

Similar Products

SDRAM - 2420770 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 20 ns
Number of Words 128000 k
View Details
Memory - 5962-8764814QYA - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EPROM; EPROM
Access Time 250 ns
Density 512 kbits
View Details