RF 0.035A C BAND GERMANIUM NPN Product overview: HSG1002VE-TL-E from Renesas Electronics Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.035A. Search-friendly keywords include transistor, BJT, switching, amplification, 0.035A, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-HSG1002VE-TL-E can be used for catalog matching and distributor lookup.
RF Small Signal Bipolar Transistor
Manufacturer: Renesas Electronics America
Win Source Part Number: 068202-HSG1002VE-TL-
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance
| ERSAELECTRONICS PTE. LTD. | Rochester Electronics | Win Source Electronics | |
|---|---|---|---|
| Product Category | Bipolar RF Transistors | Bipolar RF Transistors | Transistors |
| Product Number | 283-HSG1002VE-TL-E | HSG1002VE-TL-E | 068202-HSG1002VE-TL-E |
| Product Name | 0.035A Bipolar Transistor | TRANSISTORS - RF Transistors (BJT) - HSG1002VE-TL-E | |
| Package Type | Bulk | DO-35, DO-204AH |
