Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - HS54095TZ-E HS54095TZ-E

Description
Manufacturer: Renesas Electronics America Win Source Part Number: 1043968-HS54095TZ-E Packaging: Reel - TR Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 750mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-92-3 Dimension: TO-226-3, TO-92-3 Short Body Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 200mA (Ta) Max Gate Charge: 4.8nC @ 10V Max Input Capacitance: 66pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 16.5 Ohm @ 100mA, 10V Alternative Parts (Cross-Reference): STQ1HNK60R-AP; MDZ1N60UMH; SW C 1N60A; HS54095TZ-E; Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - HS54095TZ-E - 1043968-HS54095TZ-E - Win Source Electronics
    Win Source Electronics
  • MOSFET N-CH 600V 0.2A TO-92 - 668-HS54095TZ-E - Utmel Electronic Limited
    Utmel Electronic Limited
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Description
Manufacturer: Renesas Electronics America Win Source Part Number: 1043968-HS54095TZ-E Packaging: Reel - TR Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 750mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-92-3 Dimension: TO-226-3, TO-92-3 Short Body Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 200mA (Ta) Max Gate Charge: 4.8nC @ 10V Max Input Capacitance: 66pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 16.5 Ohm @ 100mA, 10V Alternative Parts (Cross-Reference): STQ1HNK60R-AP; MDZ1N60UMH; SW C 1N60A; HS54095TZ-E; Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HS54095TZ-E - 1043968-HS54095TZ-E - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HS54095TZ-E
1043968-HS54095TZ-E
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HS54095TZ-E 1043968-HS54095TZ-E
Manufacturer: Renesas Electronics America Win Source Part Number: 1043968-HS54095TZ-E Packaging: Reel - TR Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 750mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-92-3 Dimension: TO-226-3, TO-92-3 Short Body Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 200mA (Ta) Max Gate Charge: 4.8nC @ 10V Max Input Capacitance: 66pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 16.5 Ohm @ 100mA, 10V Alternative Parts (Cross-Reference): STQ1HNK60R-AP; MDZ1N60UMH; SW C 1N60A; HS54095TZ-E; Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance

Manufacturer: Renesas Electronics America
Win Source Part Number: 1043968-HS54095TZ-E
Packaging: Reel - TR
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 750mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-92-3
Dimension: TO-226-3, TO-92-3 Short Body
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 200mA (Ta)
Max Gate Charge: 4.8nC @ 10V
Max Input Capacitance: 66pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 16.5 Ohm @ 100mA, 10V
Alternative Parts (Cross-Reference): STQ1HNK60R-AP; MDZ1N60UMH; SW C 1N60A; HS54095TZ-E;
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
HS54095TZ-E
Discrete Semiconductor Products - Transistors - FETs, MOSFETs HS54095TZ-E
HS54095TZ-E - N-CHANNEL POWER MO

HS54095TZ-E - N-CHANNEL POWER MO

Supplier's Site
MOSFET N-CH 600V 0.2A TO-92 - 668-HS54095TZ-E - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 600V 0.2A TO-92
668-HS54095TZ-E
MOSFET N-CH 600V 0.2A TO-92 668-HS54095TZ-E
MOSFET N-CH 600V 0.2A TO-92

MOSFET N-CH 600V 0.2A TO-92

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
HS54095TZ-E
MOSFET HS54095TZ-E
MOSFET MOSFET

MOSFET MOSFET

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Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1043968-HS54095TZ-E HS54095TZ-E 668-HS54095TZ-E HS54095TZ-E
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - HS54095TZ-E Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N-CH 600V 0.2A TO-92 MOSFET
Polarity N-Channel; N-Channel
V(BR)DSS 600 volts 600 volts
PD 750 milliwatts 750 milliwatts
TJ 150 C (302 F) 150 C (302 F)
Package Type TO-92; SOT3; TO-92-3 TO-92; TO-226-3, TO-92-3 (TO-226AA)
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