Manufacturer: Renesas Electronics America
Win Source Part Number: 1043968-HS54095TZ-E
Packaging: Reel - TR
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 750mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-92-3
Dimension: TO-226-3, TO-92-3 Short Body
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 200mA (Ta)
Max Gate Charge: 4.8nC @ 10V
Max Input Capacitance: 66pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 16.5 Ohm @ 100mA, 10V
Alternative Parts (Cross-Reference): STQ1HNK60R-AP; MDZ1N60UMH; SW C 1N60A; HS54095TZ-E;
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance
HS54095TZ-E - N-CHANNEL POWER MO
MOSFET N-CH 600V 0.2A TO-92
| Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Utmel Electronic Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1043968-HS54095TZ-E | HS54095TZ-E | HS54095TZ-E | 668-HS54095TZ-E |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - HS54095TZ-E | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | MOSFET N-CH 600V 0.2A TO-92 |
| Polarity | N-Channel; N-Channel | |||
| V(BR)DSS | 600 volts | 600 volts | ||
| PD | 750 milliwatts | 750 milliwatts | ||
| TJ | 150 C (302 F) | 150 C (302 F) | ||
| Package Type | TO-92; SOT3; TO-92-3 | TO-92; TO-226-3, TO-92-3 (TO-226AA) |
