Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - HS54095TZ-E HS54095TZ-E

Description
Manufacturer: Renesas Electronics America Win Source Part Number: 1043968-HS54095TZ-E Packaging: Reel - TR Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 750mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-92-3 Dimension: TO-226-3, TO-92-3 Short Body Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 200mA (Ta) Max Gate Charge: 4.8nC @ 10V Max Input Capacitance: 66pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 16.5 Ohm @ 100mA, 10V Alternative Parts (Cross-Reference): STQ1HNK60R-AP; MDZ1N60UMH; SW C 1N60A; HS54095TZ-E; Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Renesas Electronics America Win Source Part Number: 1043968-HS54095TZ-E Packaging: Reel - TR Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 750mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-92-3 Dimension: TO-226-3, TO-92-3 Short Body Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 200mA (Ta) Max Gate Charge: 4.8nC @ 10V Max Input Capacitance: 66pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 16.5 Ohm @ 100mA, 10V Alternative Parts (Cross-Reference): STQ1HNK60R-AP; MDZ1N60UMH; SW C 1N60A; HS54095TZ-E; Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HS54095TZ-E - 1043968-HS54095TZ-E - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HS54095TZ-E
1043968-HS54095TZ-E
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HS54095TZ-E 1043968-HS54095TZ-E
Manufacturer: Renesas Electronics America Win Source Part Number: 1043968-HS54095TZ-E Packaging: Reel - TR Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 750mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-92-3 Dimension: TO-226-3, TO-92-3 Short Body Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 200mA (Ta) Max Gate Charge: 4.8nC @ 10V Max Input Capacitance: 66pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 16.5 Ohm @ 100mA, 10V Alternative Parts (Cross-Reference): STQ1HNK60R-AP; MDZ1N60UMH; SW C 1N60A; HS54095TZ-E; Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance

Manufacturer: Renesas Electronics America
Win Source Part Number: 1043968-HS54095TZ-E
Packaging: Reel - TR
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 750mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-92-3
Dimension: TO-226-3, TO-92-3 Short Body
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 200mA (Ta)
Max Gate Charge: 4.8nC @ 10V
Max Input Capacitance: 66pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 16.5 Ohm @ 100mA, 10V
Alternative Parts (Cross-Reference): STQ1HNK60R-AP; MDZ1N60UMH; SW C 1N60A; HS54095TZ-E;
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
HS54095TZ-E
Discrete Semiconductor Products - Transistors - FETs, MOSFETs HS54095TZ-E
HS54095TZ-E - N-CHANNEL POWER MO

HS54095TZ-E - N-CHANNEL POWER MO

Supplier's Site
MOSFET N-CH 600V 0.2A TO-92 - 668-HS54095TZ-E - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 600V 0.2A TO-92
668-HS54095TZ-E
MOSFET N-CH 600V 0.2A TO-92 668-HS54095TZ-E
MOSFET N-CH 600V 0.2A TO-92

MOSFET N-CH 600V 0.2A TO-92

Supplier's Site
Sheung Wan, Hong Kong
MOSFET MOSFET

MOSFET MOSFET

Buy Now Datasheet

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1043968-HS54095TZ-E HS54095TZ-E 668-HS54095TZ-E HS54095TZ-E
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - HS54095TZ-E Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N-CH 600V 0.2A TO-92 MOSFET
Polarity N-Channel; N-Channel
V(BR)DSS 600 volts 600 volts
PD 750 milliwatts 750 milliwatts
TJ 150 C (302 F) 150 C (302 F)
Package Type TO-92; SOT3; TO-92-3 TO-92; TO-226-3, TO-92-3 (TO-226AA)
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