Renesas Electronics Corporation Integrated Circuits (ICs) - Memory - Memory HN58V66AFPI10E

Description
HN58V66 - PARALLEL 64KBIT EEPROM
Datasheet
Description
HN58V66 - PARALLEL 64KBIT EEPROM
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
HN58V66AFPI10E
Integrated Circuits (ICs) - Memory - Memory HN58V66AFPI10E
HN58V66 - PARALLEL 64KBIT EEPROM

HN58V66 - PARALLEL 64KBIT EEPROM

Supplier's Site
Memory - HN58V66AFPI10E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory IC

Memory IC

Buy Now Datasheet

Technical Specifications

  Acme Chip Technology Co., Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number HN58V66AFPI10E HN58V66AFPI10E
Product Name Integrated Circuits (ICs) - Memory - Memory Memory
Unlock Full Specs
to access all available technical data

Similar Products

SDRAM - 2420773 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 20 ns
Number of Words 64000 k
View Details
Memory - Controllers - DP8421ATVX-25 - Lingto Electronic Limited
Specs
Operating Temperature 0 to 70 C (32 to 158 F)
Package Type 68-LCC (J-Lead)
View Details
2 suppliers
Memory - MYX4DDR3L128M16JTBG - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DDR3
Access Time 1.25 ns
Operating Temperature -40 to 95 C (-40 to 203 F)
View Details
Memory - 28302961 A - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers