Renesas Electronics Corporation HN58V65AFP10E

Description
EEPROM
Request a Quote Datasheet
Description
EEPROM
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - HN58V65AFP10E - Rochester Electronics
Newburyport, MA, United States
EEPROM

EEPROM

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Memory Chips
Product Number HN58V65AFP10E
Memory Category EEPROM
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 315-0827-000 001 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers
Logic - Logic - FIFOs Memory - CD54HCT40105F3A - 1160037-CD54HCT40105F3A - Win Source Electronics
Specs
Memory Category FIFO
View Details
2 suppliers
Memory - MYXxxSMS01GP32xxx-45/x - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category MRAM; STT-MRAM
Access Time 45 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 5962-8996701MXA - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EPROM; EPROM
Access Time 60 ns
Density 64 kbits
View Details