Renesas Electronics Corporation Memory - EEPROM - HN58V257AT12E HN58V257AT12E

Description
Manufacturer: Renesas Electronics America Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1063306-HN58V257AT12 E Mounting: SMD (SMT) Operating Supply Voltage: 3 V Interface: Parallel Access Time: 120 ns Density: 256 kb Number of Pins: 32 Categories: EEPROM Case / Package: TSOP Alternative Parts (Cross-Reference): HN58V256ATI12E; AT28C010E-12TU; AT28C010-12TU; AT28C256E-15TU; HN58V65AT10E; HN58C1001RT-15EHN58V 257AT-12E; Popularity: Low Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 70 °C Lead Free: Yes Mount: Surface Mount RoHS: Compliant Radiation Hardening: No Min Operating Temperature: 0 °C Max Supply Voltage: 5.5 V Min Supply Voltage: 2.7 V Nominal Supply Current: 30 mA
Request a Quote
Description
Manufacturer: Renesas Electronics America Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1063306-HN58V257AT12 E Mounting: SMD (SMT) Operating Supply Voltage: 3 V Interface: Parallel Access Time: 120 ns Density: 256 kb Number of Pins: 32 Categories: EEPROM Case / Package: TSOP Alternative Parts (Cross-Reference): HN58V256ATI12E; AT28C010E-12TU; AT28C010-12TU; AT28C256E-15TU; HN58V65AT10E; HN58C1001RT-15EHN58V 257AT-12E; Popularity: Low Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 70 °C Lead Free: Yes Mount: Surface Mount RoHS: Compliant Radiation Hardening: No Min Operating Temperature: 0 °C Max Supply Voltage: 5.5 V Min Supply Voltage: 2.7 V Nominal Supply Current: 30 mA
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Memory - EEPROM - HN58V257AT12E - 1063306-HN58V257AT12E - Win Source Electronics
Laguna Hills, CA, United States
Memory - EEPROM - HN58V257AT12E
1063306-HN58V257AT12E
Memory - EEPROM - HN58V257AT12E 1063306-HN58V257AT12E
Manufacturer: Renesas Electronics America Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1063306-HN58V257AT12 E Mounting: SMD (SMT) Operating Supply Voltage: 3 V Interface: Parallel Access Time: 120 ns Density: 256 kb Number of Pins: 32 Categories: EEPROM Case / Package: TSOP Alternative Parts (Cross-Reference): HN58V256ATI12E; AT28C010E-12TU; AT28C010-12TU; AT28C256E-15TU; HN58V65AT10E; HN58C1001RT-15EHN58V 257AT-12E; Popularity: Low Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 70 °C Lead Free: Yes Mount: Surface Mount RoHS: Compliant Radiation Hardening: No Min Operating Temperature: 0 °C Max Supply Voltage: 5.5 V Min Supply Voltage: 2.7 V Nominal Supply Current: 30 mA

Manufacturer: Renesas Electronics America
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1063306-HN58V257AT12E
Mounting: SMD (SMT)
Operating Supply Voltage: 3 V
Interface: Parallel
Access Time: 120 ns
Density: 256 kb
Number of Pins: 32
Categories: EEPROM
Case / Package: TSOP
Alternative Parts (Cross-Reference): HN58V256ATI12E; AT28C010E-12TU; AT28C010-12TU; AT28C256E-15TU; HN58V65AT10E; HN58C1001RT-15EHN58V257AT-12E;
Popularity: Low
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 70 °C
Lead Free: Yes
Mount: Surface Mount
RoHS: Compliant
Radiation Hardening: No
Min Operating Temperature: 0 °C
Max Supply Voltage: 5.5 V
Min Supply Voltage: 2.7 V
Nominal Supply Current: 30 mA

Buy Now

Technical Specifications

  Win Source Electronics
Product Category Memory Chips
Product Number 1063306-HN58V257AT12E
Product Name Memory - EEPROM - HN58V257AT12E
Memory Category EEPROM
Access Time 120 ns
Operating Temperature 0 C (32 F)
Density 256 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882523 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Bits per Word 8 bits
Pins 8
View Details
Memory - 93C06E/SN - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Density 0 kbits
View Details
Integrated Circuits (ICs) - Memory - Memory - 54F189DC - Acme Chip Technology Co., Limited
Specs
Memory Category Volatile
Cycle Time 15.5 ns
Density 0 kbits
View Details
2 suppliers
Memory - MYX4DDR364M16JTBG - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DDR3
Access Time 1.07 ns
Operating Temperature -40 to 105 C (-40 to 221 F)
View Details