Renesas Electronics Corporation Memory - EEPROM - HN58V257AT12E HN58V257AT12E

Manufacturer: Renesas Electronics America
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1063306-HN58V257AT12E
Mounting: SMD (SMT)
Operating Supply Voltage: 3 V
Interface: Parallel
Access Time: 120 ns
Density: 256 kb
Number of Pins: 32
Categories: EEPROM
Case / Package: TSOP
Alternative Parts (Cross-Reference): HN58V256ATI12E; AT28C010E-12TU; AT28C010-12TU; AT28C256E-15TU; HN58V65AT10E; HN58C1001RT-15EHN58V257AT-12E;
Popularity: Low
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 70 °C
Lead Free: Yes
Mount: Surface Mount
RoHS: Compliant
Radiation Hardening: No
Min Operating Temperature: 0 °C
Max Supply Voltage: 5.5 V
Min Supply Voltage: 2.7 V
Nominal Supply Current: 30 mA

EEPROM Parallel 256K-bit 32K x 8 3V 32-Pin TSOP Product overview: HN58V257AT12E from Renesas Electronics Corporation is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 3V. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 3V, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-HN58V257AT12E can be used for catalog matching and distributor lookup.