Renesas Electronics Corporation 3V Memory IC and Storage Component HN58V257AT12E

Description
EEPROM Parallel 256K-bit 32K x 8 3V 32-Pin TSOP Product overview: HN58V257AT12E from Renesas Electronics Corporation is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 3V. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 3V, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-HN58V257AT12E can be used for catalog matching and distributor lookup.
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Description
EEPROM Parallel 256K-bit 32K x 8 3V 32-Pin TSOP Product overview: HN58V257AT12E from Renesas Electronics Corporation is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 3V. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 3V, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-HN58V257AT12E can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
3V Memory IC and Storage Component - 774-HN58V257AT12E - ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
3V Memory IC and Storage Component
774-HN58V257AT12E
3V Memory IC and Storage Component 774-HN58V257AT12E
EEPROM Parallel 256K-bit 32K x 8 3V 32-Pin TSOP Product overview: HN58V257AT12E from Renesas Electronics Corporation is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 3V. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 3V, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-HN58V257AT12E can be used for catalog matching and distributor lookup.

EEPROM Parallel 256K-bit 32K x 8 3V 32-Pin TSOP Product overview: HN58V257AT12E from Renesas Electronics Corporation is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 3V. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 3V, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-HN58V257AT12E can be used for catalog matching and distributor lookup.

Supplier's Site
Memory - EEPROM - HN58V257AT12E - 1063306-HN58V257AT12E - Win Source Electronics
Laguna Hills, CA, United States
Memory - EEPROM - HN58V257AT12E
1063306-HN58V257AT12E
Memory - EEPROM - HN58V257AT12E 1063306-HN58V257AT12E
Manufacturer: Renesas Electronics America Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1063306-HN58V257AT12 E Mounting: SMD (SMT) Operating Supply Voltage: 3 V Interface: Parallel Access Time: 120 ns Density: 256 kb Number of Pins: 32 Categories: EEPROM Case / Package: TSOP Alternative Parts (Cross-Reference): HN58V256ATI12E; AT28C010E-12TU; AT28C010-12TU; AT28C256E-15TU; HN58V65AT10E; HN58C1001RT-15EHN58V 257AT-12E; Popularity: Low Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 70 °C Lead Free: Yes Mount: Surface Mount RoHS: Compliant Radiation Hardening: No Min Operating Temperature: 0 °C Max Supply Voltage: 5.5 V Min Supply Voltage: 2.7 V Nominal Supply Current: 30 mA

Manufacturer: Renesas Electronics America
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1063306-HN58V257AT12E
Mounting: SMD (SMT)
Operating Supply Voltage: 3 V
Interface: Parallel
Access Time: 120 ns
Density: 256 kb
Number of Pins: 32
Categories: EEPROM
Case / Package: TSOP
Alternative Parts (Cross-Reference): HN58V256ATI12E; AT28C010E-12TU; AT28C010-12TU; AT28C256E-15TU; HN58V65AT10E; HN58C1001RT-15EHN58V257AT-12E;
Popularity: Low
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 70 °C
Lead Free: Yes
Mount: Surface Mount
RoHS: Compliant
Radiation Hardening: No
Min Operating Temperature: 0 °C
Max Supply Voltage: 5.5 V
Min Supply Voltage: 2.7 V
Nominal Supply Current: 30 mA

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Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics
Product Category Memory Chips Memory Chips
Product Number 774-HN58V257AT12E 1063306-HN58V257AT12E
Product Name 3V Memory IC and Storage Component Memory - EEPROM - HN58V257AT12E
Memory Category EEPROM EEPROM
Access Time 120 ns 120 ns
Operating Temperature 0 C (32 F) 0 C (32 F)
Density 256 kbits 256 kbits
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