Renesas Electronics Corporation 8-bit Memory IC and Storage Component HN58C256AT10E

The HN58C256AT10E is a 256k EEPROM organized as 32-kword vó 8-bit, utilizing advanced MNOS memory technology and CMOS processes for high speed and low power consumption. It operates with a single 5 V supply and features an access time of 100 ns maximum. The device supports a 64-byte page programming function, allowing for faster write operations with an automatic byte write time of 10 ms maximum. Power dissipation is rated at 20 mW/MHz during active operation and a maximum of 110 ¬µW in standby mode. The HN58C256AT10E includes on-chip latches for address, data, chip enable (CE), output enable (OE), and write enable (WE). It offers data protection during power on/off and has a data retention capability of up to 10 years, with a specified endurance of 100,000 erase/write cycles in page mode. This part is available in a 28-pin plastic TSOP package and is compliant with JEDEC byte-wide standards. Additionally, lead-free versions are offered, making it suitable for various industrial applications with temperature ranges from -20 to 85¬8C and -40 to 85¬8C.