Renesas Electronics Corporation Memory HN27C4001G12

Description
EPROM - UV Memory IC 4Mbit Parallel 120 ns 32-CDIP
Datasheet
Description
EPROM - UV Memory IC 4Mbit Parallel 120 ns 32-CDIP
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - HN27C4001G12 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EPROM - UV Memory IC 4Mbit Parallel 120 ns 32-CDIP

EPROM - UV Memory IC 4Mbit Parallel 120 ns 32-CDIP

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - HN27C4001G12 - Acme Chip Technology Co., Limited
Shenzhen, China
Integrated Circuits (ICs) - Memory
HN27C4001G12
Integrated Circuits (ICs) - Memory HN27C4001G12
UV EPROM, 512KX8, 120NS

UV EPROM, 512KX8, 120NS

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips
Product Number HN27C4001G12 HN27C4001G12
Product Name Memory Integrated Circuits (ICs) - Memory
Memory Category EPROM; EPROM EPROM; Non-Volatile
Access Time 120 ns 120 ns
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
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