The HIP6603BCB is a dual MOSFET driver designed to drive two power N-channel MOSFETs in a synchronous rectified buck converter topology. It is packaged in an 8-lead SOIC and operates within a temperature range of 0°C to 85°C. The driver supports a gate drive voltage range of 5V to 12V for both upper and lower gates, enabling optimization of switching and conduction losses. It includes adaptive shoot-through protection, an internal bootstrap device, and can switch loads up to 2MHz with a 30ns propagation delay and 50ns transition time. A three-state input allows output stage shutdown, and undervoltage protection is integrated. The device is compliant with standard SOIC packaging and is intended for use in core-voltage regulation for advanced microprocessors and high-frequency DC-DC converters.
Half Bridge Based MOSFET Driver, 0.73A, PDSO8
| Rochester Electronics | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | HIP6603BCB |
| Package Type | SOP8 |
