Renesas Electronics Corporation HIP6601CB

The HIP6601CB is an 8-lead SOIC package synchronous-rectified buck MOSFET driver designed to drive two N-Channel MOSFETs in a synchronous-rectified buck converter topology. It drives the lower gate to 12V and the upper gate from 5V to 12V, with adaptive shoot-through protection and an integrated bootstrap circuit. The device supports switching frequencies up to 2MHz, has a 30ns propagation delay, and operates within an ambient temperature range of 0°C to 85°C. It meets the thermal and electrical specifications for SOIC packaging with a maximum junction temperature of 125°C and a thermal resistance of 113°C/W. The part includes supply under-voltage protection and a three-state PWM input for bridge shutdown. It is qualified for use in core voltage supplies for advanced microprocessors and high-frequency DC-DC converters.