Renesas Electronics Corporation HIP2101IBZT

The HIP2101IBZT is a 100V, 2A peak half-bridge MOSFET driver with TTL/CMOS-compatible inputs, offered in an 8-lead SOIC package with Pb-free finish and RoHS compliance. It features independent high- and low-side driver control with 13ns delay matching, an on-chip 1Ω bootstrap diode, and undervoltage protection on both supply rails. The device supports bootstrap supply voltages up to 114VDC, drives 1000pF loads with typical 10ns rise and fall times, and operates from -40°C to 125°C. The exposed pad variant improves thermal performance and meets IPC-2221 100V conductor spacing guidelines.