Renesas Electronics Corporation Bipolar RF Transistors HFA3127BZ

Description
RF Transistor 5 NPN 12V 65mA 8GHz 150mW Surface Mount 16-SOIC
Request a Quote Datasheet
Description
RF Transistor 5 NPN 12V 65mA 8GHz 150mW Surface Mount 16-SOIC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Bipolar RF Transistors - HFA3127BZ-ND - DigiKey
Thief River Falls, MN, United States
Bipolar RF Transistors
HFA3127BZ-ND
Bipolar RF Transistors HFA3127BZ-ND
RF Transistor 5 NPN 12V 65mA 8GHz 150mW Surface Mount 16-SOIC

RF Transistor 5 NPN 12V 65mA 8GHz 150mW Surface Mount 16-SOIC

Buy Now Datasheet
TRANSISTORS - RF Transistors (BJT) - HFA3127BZ - 001572-HFA3127BZ - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - HFA3127BZ
001572-HFA3127BZ
TRANSISTORS - RF Transistors (BJT) - HFA3127BZ 001572-HFA3127BZ
Manufacturer: Intersil Win Source Part Number: 001572-HFA3127BZ Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 8GHz Transistor Polarity: 5 NPN Noise Figure (dB Typ @ f): 3.5dB @ 1GHz Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 16-SOIC Maximum Current Collector: 65mA VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Typical Gain (hFE) (Min): 40 @ 10mA, 2V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Limited Quantity per package: 48

Manufacturer: Intersil
Win Source Part Number: 001572-HFA3127BZ
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 8GHz
Transistor Polarity: 5 NPN
Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 16-SOIC
Maximum Current Collector: 65mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 12V
Typical Gain (hFE) (Min): 40 @ 10mA, 2V
Maximum Power Dissipation: 150mW
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Limited
Quantity per package: 48

Buy Now Datasheet
Transistor Array, Npn, 5, 12V, Soic; Transistor Polarity Renesas - 57K3791 - Newark, An Avnet Company
Chicago, IL, United States
Transistor Array, Npn, 5, 12V, Soic; Transistor Polarity Renesas
57K3791
Transistor Array, Npn, 5, 12V, Soic; Transistor Polarity Renesas 57K3791
TRANSISTOR ARRAY, NPN, 5, 12V, SOIC; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:8V; DC Collector Current:37mA; Power Dissipation Pd:150mW; DC Current Gain hFE:130hFE; No. of Pins:16Pins; Product Range:- RoHS Compliant: Yes

TRANSISTOR ARRAY, NPN, 5, 12V, SOIC; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:8V; DC Collector Current:37mA; Power Dissipation Pd:150mW; DC Current Gain hFE:130hFE; No. of Pins:16Pins; Product Range:- RoHS Compliant: Yes

Supplier's Site Datasheet
Transistor Array; Transistor Polarity Renesas - 69AC5875 - Newark, An Avnet Company
Chicago, IL, United States
Transistor Array; Transistor Polarity Renesas
69AC5875
Transistor Array; Transistor Polarity Renesas 69AC5875
TRANSISTOR ARRAY; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:8V; Power Dissipation Pd:150mW; DC Collector Current:37mA; DC Current Gain hFE:130hFE; Transistor Case Style:SOIC; No. of Pins:16Pins; Operating RoHS Compliant: Yes

TRANSISTOR ARRAY; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:8V; Power Dissipation Pd:150mW; DC Collector Current:37mA; DC Current Gain hFE:130hFE; Transistor Case Style:SOIC; No. of Pins:16Pins; Operating RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - HFA3127BZ - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
HFA3127BZ
Discrete Semiconductor Products - Transistors - Bipolar (BJT) HFA3127BZ
RF TRANS 5 NPN 12V 8GHZ 16SOIC

RF TRANS 5 NPN 12V 8GHZ 16SOIC

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Newark, An Avnet Company Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors RF Transistors Transistors Transistors Bipolar RF Transistors
Product Number HFA3127BZ-ND 001572-HFA3127BZ 57K3791 69AC5875 HFA3127BZ
Product Name Bipolar RF Transistors TRANSISTORS - RF Transistors (BJT) - HFA3127BZ Transistor Array, Npn, 5, 12V, Soic; Transistor Polarity Renesas Transistor Array; Transistor Polarity Renesas Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; 5 NPN NPN
Package Type "16-SOIC (0.154"", 3.90mm Width)" SOT3; 16-SOIC TO-3 TO-3
Packing Method Tape Reel; Reel - TR Tube; Tube
TJ 150 C (302 F)
Power Gain 40 dB
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