Manufacturer: Intersil
Win Source Part Number: 001572-HFA3127BZ
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 8GHz
Transistor Polarity: 5 NPN
Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 16-SOIC
Maximum Current Collector: 65mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 12V
Typical Gain (hFE) (Min): 40 @ 10mA, 2V
Maximum Power Dissipation: 150mW
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Limited
Quantity per package: 48
RF Transistor 5 NPN 12V 65mA 8GHz 150mW Surface Mount 16-SOIC
RF TRANS 5 NPN 12V 8GHZ 16SOIC Product overview: HFA3127BZ from Renesas Electronics Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 8GHZ. Search-friendly keywords include transistor, BJT, switching, amplification, 12V, 8GHZ, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-HFA3127BZ can be used for catalog matching and distributor lookup.
TRANSISTOR ARRAY, NPN, 5, 12V, SOIC; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:8V; DC Collector Current:37mA; Power Dissipation Pd:150mW; DC Current Gain hFE:130hFE; No. of Pins:16Pins; Product Range:- RoHS Compliant: Yes
TRANSISTOR ARRAY; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:8V; Power Dissipation Pd:150mW; DC Collector Current:37mA; DC Current Gain hFE:130hFE; Transistor Case Style:SOIC; No. of Pins:16Pins; Operating RoHS Compliant: Yes
RF TRANS 5 NPN 12V 8GHZ 16SOIC
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | RF Transistors | Transistors | Bipolar RF Transistors | Transistors | Transistors | Bipolar RF Transistors |
| Product Number | 001572-HFA3127BZ | HFA3127BZ-ND | 283-HFA3127BZ | 57K3791 | 69AC5875 | HFA3127BZ |
| Product Name | TRANSISTORS - RF Transistors (BJT) - HFA3127BZ | Bipolar RF Transistors | 12V 8GHZ Bipolar Transistor | Transistor Array, Npn, 5, 12V, Soic; Transistor Polarity Renesas | Transistor Array; Transistor Polarity Renesas | Discrete Semiconductor Products - Transistors - Bipolar (BJT) |
| Polarity | NPN; 5 NPN | NPN | NPN | NPN | ||
| Package Type | SOT3; 16-SOIC | "16-SOIC (0.154"", 3.90mm Width)" | Tube | TO-3 | TO-3 | |
| Packing Method | Tape Reel; Reel - TR | Tube | Tube; Tube | |||
| TJ | 150 C (302 F) | 150 C (302 F) | ||||
| Power Gain | 40 dB |
