Renesas Electronics Corporation Dual Long-Tailed Pair Transistor Array HFA3102BZ96

Description
The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1 SOI process, this array achieves very high fT (10GHz) while maintaining excellent hFE and VBE matching characteristics over temperature. Collector leakage currents are maintained to under 0.01nA.brbr
  • Dual Long-Tailed Pair Transistor Array - HFA3102BZ96 - Renesas Electronics Corporation
    Renesas Electronics Corporation
  • TRANSISTORS - RF Transistors (BJT) - HFA3102BZ96 - 001571-HFA3102BZ96 - Win Source Electronics
    Win Source Electronics
  • Bipolar RF Transistors - HFA3102BZ96TR-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - HFA3102BZ96 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1 SOI process, this array achieves very high fT (10GHz) while maintaining excellent hFE and VBE matching characteristics over temperature. Collector leakage currents are maintained to under 0.01nA.brbr
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Dual Long-Tailed Pair Transistor Array - HFA3102BZ96 - Renesas Electronics Corporation
Renesas Electronics Corporation
Milpitas, CA, USA
Dual Long-Tailed Pair Transistor Array
HFA3102BZ96
Dual Long-Tailed Pair Transistor Array HFA3102BZ96
The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1 SOI process, this array achieves very high fT (10GHz) while maintaining excellent hFE and VBE matching characteristics over temperature. Collector leakage currents are maintained to under 0.01nA.brbr

The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1 SOI process, this array achieves very high fT (10GHz) while maintaining excellent hFE and VBE matching characteristics over temperature. Collector leakage currents are maintained to under 0.01nA.brbr

Supplier's Site Datasheet
TRANSISTORS - RF Transistors (BJT) - HFA3102BZ96 - 001571-HFA3102BZ96 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - HFA3102BZ96
001571-HFA3102BZ96
TRANSISTORS - RF Transistors (BJT) - HFA3102BZ96 001571-HFA3102BZ96
Manufacturer: Intersil Win Source Part Number: 001571-HFA3102BZ96 Packaging: Reel - TR Mounting: SMD (SMT) Gain: 12.4dB to 17.5dB Frequency - Transition: 10GHz Transistor Polarity: 6 NPN Noise Figure (dB Typ @ f): 1.8dB to 2.1dB @ 500MHz to 1GHz Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 14-SOIC Maximum Current Collector: 30mA VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Typical Gain (hFE) (Min): 40 @ 10mA, 3V Maximum Power Dissipation: 250mW Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance Quantity per package: 2,500

Manufacturer: Intersil
Win Source Part Number: 001571-HFA3102BZ96
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 12.4dB to 17.5dB
Frequency - Transition: 10GHz
Transistor Polarity: 6 NPN
Noise Figure (dB Typ @ f): 1.8dB to 2.1dB @ 500MHz to 1GHz
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 14-SOIC
Maximum Current Collector: 30mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 12V
Typical Gain (hFE) (Min): 40 @ 10mA, 3V
Maximum Power Dissipation: 250mW
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500

Buy Now Datasheet
Bipolar RF Transistors - HFA3102BZ96TR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Bipolar RF Transistors
HFA3102BZ96TR-ND
Bipolar RF Transistors HFA3102BZ96TR-ND
RF Transistor 6 NPN 12V 30mA 10GHz 250mW Surface Mount 14-SOIC

RF Transistor 6 NPN 12V 30mA 10GHz 250mW Surface Mount 14-SOIC

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - HFA3102BZ96 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
HFA3102BZ96
Discrete Semiconductor Products - Transistors - Bipolar (BJT) HFA3102BZ96
RF TRANS 6 NPN 12V 10GHZ 14SOIC

RF TRANS 6 NPN 12V 10GHZ 14SOIC

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
RF Bipolar Transistors
HFA3102BZ96
RF Bipolar Transistors HFA3102BZ96
RF Bipolar Transistors W/ANNEAL OPAMP 2X LONGTAIL NPN PAIR 15

RF Bipolar Transistors W/ANNEAL OPAMP 2X LONGTAIL NPN PAIR 15

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Technical Specifications

  Renesas Electronics Corporation Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category RF Transistors Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number HFA3102BZ96 001571-HFA3102BZ96 HFA3102BZ96TR-ND HFA3102BZ96 HFA3102BZ96
Product Name Dual Long-Tailed Pair Transistor Array TRANSISTORS - RF Transistors (BJT) - HFA3102BZ96 Bipolar RF Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT) RF Bipolar Transistors
Polarity NPN NPN; 6 NPN NPN
Package Type SOIC14 SOT3; 14-SOIC "14-SOIC (0.154"", 3.90mm Width)"
Noise Figure 2.1 dB
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