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Renesas Electronics Corporation Dual Long-Tailed Pair Transistor Array HFA3102BZ

Description
The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1 SOI process, this array achieves very high fT (10GHz) while maintaining excellent hFE and VBE matching characteristics over temperature. Collector leakage currents are maintained to under 0.01nA.brbr
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Suppliers

Company
Product
Description
Supplier Links
Dual Long-Tailed Pair Transistor Array - HFA3102BZ - Renesas Electronics Corporation
Milpitas, CA, USA
Dual Long-Tailed Pair Transistor Array
HFA3102BZ
Dual Long-Tailed Pair Transistor Array HFA3102BZ
The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1 SOI process, this array achieves very high fT (10GHz) while maintaining excellent hFE and VBE matching characteristics over temperature. Collector leakage currents are maintained to under 0.01nA.brbr

The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1 SOI process, this array achieves very high fT (10GHz) while maintaining excellent hFE and VBE matching characteristics over temperature. Collector leakage currents are maintained to under 0.01nA.brbr

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HFA3102BZ - 1180158-HFA3102BZ - Win Source Electronics
Yishun, Singapore
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HFA3102BZ
1180158-HFA3102BZ
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HFA3102BZ 1180158-HFA3102BZ
Manufacturer: Renesas Electronics America Inc. Win Source Part Number: 1180158-HFA3102BZ Packaging: Reel Mounting Style: SMD Gain: 12.4dB ~ 17.5dB Transistor Type: 6 NPN Frequency - Transition: 10GHz Categories: Discrete Semiconductor Products Supplier Device Package: 14-SOIC Temperature Range - Operating: 150°C Manufacturer Homepage: www.intersil.com/cda /home Manufacturer Package: 14-SOIC Current - Collector (Ic) (Maximum): 30mA Voltage - Collector Emitter Breakdown (Maximum): 12V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited Family Part Number: HFA3102 Manufacturer Pack Quantity: 1 MSL Level: 3 (168 Hours) DC Current Gain (hFE) (Minimum) at Ic, Vce: 40 at 10mA, 3V Maximum Power: 250mW Noise Figure (dB Typ at f): 1.8dB ~ 2.1dB at 500MHz ~ 1GHz

Manufacturer: Renesas Electronics America Inc.
Win Source Part Number: 1180158-HFA3102BZ
Packaging: Reel
Mounting Style: SMD
Gain: 12.4dB ~ 17.5dB
Transistor Type: 6 NPN
Frequency - Transition: 10GHz
Categories: Discrete Semiconductor Products
Supplier Device Package: 14-SOIC
Temperature Range - Operating: 150°C
Manufacturer Homepage: www.intersil.com/cda/home
Manufacturer Package: 14-SOIC
Current - Collector (Ic) (Maximum): 30mA
Voltage - Collector Emitter Breakdown (Maximum): 12V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited
Family Part Number: HFA3102
Manufacturer Pack Quantity: 1
MSL Level: 3 (168 Hours)
DC Current Gain (hFE) (Minimum) at Ic, Vce: 40 at 10mA, 3V
Maximum Power: 250mW
Noise Figure (dB Typ at f): 1.8dB ~ 2.1dB at 500MHz ~ 1GHz

Supplier's Site
Bipolar RF Transistors - 20-HFA3102BZ-ND - DigiKey
Thief River Falls, MN, United States
Bipolar RF Transistors
20-HFA3102BZ-ND
Bipolar RF Transistors 20-HFA3102BZ-ND
RF Transistor 6 NPN 12V 30mA 10GHz 250mW Surface Mount 14-SOIC

RF Transistor 6 NPN 12V 30mA 10GHz 250mW Surface Mount 14-SOIC

Supplier's Site Datasheet
Sheung Wan, Hong Kong
RF Bipolar Transistors
HFA3102BZ
RF Bipolar Transistors HFA3102BZ
RF Bipolar Transistors W/ANNEAL OPAMP 2X LONGTAIL NPN PAIR 14

RF Bipolar Transistors W/ANNEAL OPAMP 2X LONGTAIL NPN PAIR 14

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - HFA3102BZ - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
HFA3102BZ
Discrete Semiconductor Products - Transistors - Bipolar (BJT) HFA3102BZ
RF TRANS 6 NPN 12V 10GHZ 14SOIC

RF TRANS 6 NPN 12V 10GHZ 14SOIC

Supplier's Site

Technical Specifications

  Renesas Electronics Corporation Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category RF Transistors RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number HFA3102BZ 1180158-HFA3102BZ 20-HFA3102BZ-ND HFA3102BZ HFA3102BZ
Product Name Dual Long-Tailed Pair Transistor Array TRANSISTORS - Transistors - FETs, MOSFETs - RF - HFA3102BZ Bipolar RF Transistors RF Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN NPN
Package Type SOIC14 SOT3 14-SOIC (0.154", 3.90mm Width)
Noise Figure 2.1 dB
Packing Method Tape Reel; Reel Tube; Tube
TJ 150 C (302 F)
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