Renesas Electronics Corporation Dual Long-Tailed Pair Transistor Array HFA3102BZ

Description
The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1 SOI process, this array achieves very high fT (10GHz) while maintaining excellent hFE and VBE matching characteristics over temperature. Collector leakage currents are maintained to under 0.01nA.brbr
  • Dual Long-Tailed Pair Transistor Array - HFA3102BZ - Renesas Electronics Corporation
    Renesas Electronics Corporation
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - HFA3102BZ - 1180158-HFA3102BZ - Win Source Electronics
    Win Source Electronics
  • Bipolar RF Transistors - 20-HFA3102BZ-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - HFA3102BZ - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1 SOI process, this array achieves very high fT (10GHz) while maintaining excellent hFE and VBE matching characteristics over temperature. Collector leakage currents are maintained to under 0.01nA.brbr
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Dual Long-Tailed Pair Transistor Array - HFA3102BZ - Renesas Electronics Corporation
Renesas Electronics Corporation
Milpitas, CA, USA
Dual Long-Tailed Pair Transistor Array
HFA3102BZ
Dual Long-Tailed Pair Transistor Array HFA3102BZ
The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1 SOI process, this array achieves very high fT (10GHz) while maintaining excellent hFE and VBE matching characteristics over temperature. Collector leakage currents are maintained to under 0.01nA.brbr

The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1 SOI process, this array achieves very high fT (10GHz) while maintaining excellent hFE and VBE matching characteristics over temperature. Collector leakage currents are maintained to under 0.01nA.brbr

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HFA3102BZ - 1180158-HFA3102BZ - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HFA3102BZ
1180158-HFA3102BZ
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HFA3102BZ 1180158-HFA3102BZ
Manufacturer: Renesas Electronics America Inc. Win Source Part Number: 1180158-HFA3102BZ Packaging: Reel Mounting Style: SMD Gain: 12.4dB ~ 17.5dB Transistor Type: 6 NPN Frequency - Transition: 10GHz Categories: Discrete Semiconductor Products Supplier Device Package: 14-SOIC Temperature Range - Operating: 150°C Manufacturer Homepage: www.intersil.com/cda /home Manufacturer Package: 14-SOIC Current - Collector (Ic) (Maximum): 30mA Voltage - Collector Emitter Breakdown (Maximum): 12V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited Family Part Number: HFA3102 Manufacturer Pack Quantity: 1 MSL Level: 3 (168 Hours) DC Current Gain (hFE) (Minimum) at Ic, Vce: 40 at 10mA, 3V Maximum Power: 250mW Noise Figure (dB Typ at f): 1.8dB ~ 2.1dB at 500MHz ~ 1GHz

Manufacturer: Renesas Electronics America Inc.
Win Source Part Number: 1180158-HFA3102BZ
Packaging: Reel
Mounting Style: SMD
Gain: 12.4dB ~ 17.5dB
Transistor Type: 6 NPN
Frequency - Transition: 10GHz
Categories: Discrete Semiconductor Products
Supplier Device Package: 14-SOIC
Temperature Range - Operating: 150°C
Manufacturer Homepage: www.intersil.com/cda/home
Manufacturer Package: 14-SOIC
Current - Collector (Ic) (Maximum): 30mA
Voltage - Collector Emitter Breakdown (Maximum): 12V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited
Family Part Number: HFA3102
Manufacturer Pack Quantity: 1
MSL Level: 3 (168 Hours)
DC Current Gain (hFE) (Minimum) at Ic, Vce: 40 at 10mA, 3V
Maximum Power: 250mW
Noise Figure (dB Typ at f): 1.8dB ~ 2.1dB at 500MHz ~ 1GHz

Buy Now
Bipolar RF Transistors - 20-HFA3102BZ-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Bipolar RF Transistors
20-HFA3102BZ-ND
Bipolar RF Transistors 20-HFA3102BZ-ND
RF Transistor 6 NPN 12V 30mA 10GHz 250mW Surface Mount 14-SOIC

RF Transistor 6 NPN 12V 30mA 10GHz 250mW Surface Mount 14-SOIC

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
12V 10GHZ Bipolar Transistor
283-HFA3102BZ
12V 10GHZ Bipolar Transistor 283-HFA3102BZ
RF TRANS 6 NPN 12V 10GHZ 14SOIC Product overview: HFA3102BZ from Renesas Electronics Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 10GHZ. Search-friendly keywords include transistor, BJT, switching, amplification, 12V, 10GHZ, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-HFA3102BZ can be used for catalog matching and distributor lookup.

RF TRANS 6 NPN 12V 10GHZ 14SOIC Product overview: HFA3102BZ from Renesas Electronics Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 10GHZ. Search-friendly keywords include transistor, BJT, switching, amplification, 12V, 10GHZ, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-HFA3102BZ can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - HFA3102BZ - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
HFA3102BZ
Discrete Semiconductor Products - Transistors - Bipolar (BJT) HFA3102BZ
RF TRANS 6 NPN 12V 10GHZ 14SOIC

RF TRANS 6 NPN 12V 10GHZ 14SOIC

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
RF Bipolar Transistors
HFA3102BZ
RF Bipolar Transistors HFA3102BZ
RF Bipolar Transistors W/ANNEAL OPAMP 2X LONGTAIL NPN PAIR 14

RF Bipolar Transistors W/ANNEAL OPAMP 2X LONGTAIL NPN PAIR 14

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Technical Specifications

  Renesas Electronics Corporation Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category RF Transistors RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number HFA3102BZ 1180158-HFA3102BZ 20-HFA3102BZ-ND 283-HFA3102BZ HFA3102BZ HFA3102BZ
Product Name Dual Long-Tailed Pair Transistor Array TRANSISTORS - Transistors - FETs, MOSFETs - RF - HFA3102BZ Bipolar RF Transistors 12V 10GHZ Bipolar Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT) RF Bipolar Transistors
Polarity NPN NPN NPN NPN
Package Type SOIC14 SOT3 "14-SOIC (0.154"", 3.90mm Width)" Tube
Noise Figure 2.1 dB 1.8 dB
Packing Method Tape Reel; Reel Tube Tube; Tube
TJ 150 C (302 F) 150 C (302 F)
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