The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersil's bonded wafer UHF-1 SOI process, this array achieves very high fT (10GHz) while maintaining excellent hFE and VBE matching characteristics that have been maximized through careful attention to circuit design and layout, making this product ideal for communication circuits. For use in mixer applications, the cell provides high gain and good cancellation of 2nd order distortion terms.
RF Bipolar Transistors TXARRAY NPN GILBERT CELL 8W
BIPOLAR ARRAY, NPN, 12V, SOIC; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:12V; DC Collector Current:30mA; Power Dissipation Pd:-; DC Current Gain hFE:40hFE; No. of Pins:8Pins; Transistor Mounting:Surface Mount RoHS Compliant: Yes
| Renesas Electronics Corporation | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|
| Product Category | RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | HFA3101BZ | HFA3101BZ | 94M7459 |
| Product Name | Gilbert Cell UHF Transistor Array | RF Bipolar Transistors | Bipolar Array, Npn, 12V, Soic; Transistor Polarity Renesas |
| Polarity | NPN | NPN |
