Renesas Electronics Corporation TRANSISTORS - RF Transistors (BJT) - HFA3096BZ HFA3096BZ

Description
Manufacturer: Intersil Win Source Part Number: 001567-HFA3096BZ Mounting: SMD (SMT) Frequency - Transition: 8GHz, 5.5GHz Transistor Polarity: 3 NPN + 2 PNP Noise Figure (dB Typ @ f): 3.5dB @ 1GHz Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 16-SOIC Maximum Current Collector: 65mA VCEO Maximum Collector-Emitter Breakdown Voltage: 12V, 15V Typical Gain (hFE) (Min): 40 @ 10mA, 2V / 20 @ 10mA, 2V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited Quantity per package: 48
Request a Quote Datasheet
Description
Manufacturer: Intersil Win Source Part Number: 001567-HFA3096BZ Mounting: SMD (SMT) Frequency - Transition: 8GHz, 5.5GHz Transistor Polarity: 3 NPN + 2 PNP Noise Figure (dB Typ @ f): 3.5dB @ 1GHz Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 16-SOIC Maximum Current Collector: 65mA VCEO Maximum Collector-Emitter Breakdown Voltage: 12V, 15V Typical Gain (hFE) (Min): 40 @ 10mA, 2V / 20 @ 10mA, 2V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited Quantity per package: 48
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - RF Transistors (BJT) - HFA3096BZ - 001567-HFA3096BZ - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - HFA3096BZ
001567-HFA3096BZ
TRANSISTORS - RF Transistors (BJT) - HFA3096BZ 001567-HFA3096BZ
Manufacturer: Intersil Win Source Part Number: 001567-HFA3096BZ Mounting: SMD (SMT) Frequency - Transition: 8GHz, 5.5GHz Transistor Polarity: 3 NPN + 2 PNP Noise Figure (dB Typ @ f): 3.5dB @ 1GHz Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 16-SOIC Maximum Current Collector: 65mA VCEO Maximum Collector-Emitter Breakdown Voltage: 12V, 15V Typical Gain (hFE) (Min): 40 @ 10mA, 2V / 20 @ 10mA, 2V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited Quantity per package: 48

Manufacturer: Intersil
Win Source Part Number: 001567-HFA3096BZ
Mounting: SMD (SMT)
Frequency - Transition: 8GHz, 5.5GHz
Transistor Polarity: 3 NPN + 2 PNP
Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 16-SOIC
Maximum Current Collector: 65mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 12V, 15V
Typical Gain (hFE) (Min): 40 @ 10mA, 2V / 20 @ 10mA, 2V
Maximum Power Dissipation: 150mW
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited
Quantity per package: 48

Buy Now Datasheet
Bipolar RF Transistors - HFA3096BZ-ND - DigiKey
Thief River Falls, MN, United States
Bipolar RF Transistors
HFA3096BZ-ND
Bipolar RF Transistors HFA3096BZ-ND
RF Transistor 3 NPN + 2 PNP 12V, 15V 65mA 8GHz, 5.5GHz 150mW Surface Mount 16-SOIC

RF Transistor 3 NPN + 2 PNP 12V, 15V 65mA 8GHz, 5.5GHz 150mW Surface Mount 16-SOIC

Buy Now Datasheet
Corby, Northants, United Kingdom
Bipolar Transistors
2355229
Bipolar Transistors 2355229
Pb-Free w/Anneal TXARRAY 3X NPN 2X PNP 1

Pb-Free w/Anneal TXARRAY 3X NPN 2X PNP 1

Supplier's Site
Corby, Northants, United Kingdom
Bipolar Transistors
2355230P
Bipolar Transistors 2355230P
Pb-Free w/Anneal TXARRAY 3X NPN 2X PNP 1

Pb-Free w/Anneal TXARRAY 3X NPN 2X PNP 1

Supplier's Site
Corby, Northants, United Kingdom
Bipolar Transistors
2355230
Bipolar Transistors 2355230
Pb-Free w/Anneal TXARRAY 3X NPN 2X PNP 1

Pb-Free w/Anneal TXARRAY 3X NPN 2X PNP 1

Supplier's Site
Transistor - 21541775 - Radwell International
Willingboro, NJ, United States
Transistor
21541775
Transistor 21541775
BIPOLAR ARRAY, 5 N-CH, 12V, SOIC, TRANSISTOR POLARITY:NPN, PNP, COLLECTOR EMITTER VOLTAGE V(BR)CEO:12V, DC COLLECTOR CURRENT:37MA, POWER DISSIPATION PD:150MW, DC CURRENT GAIN HFE:40HFE, NO. OF PINS:16PINS, PRODUCT RANGE:- ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

BIPOLAR ARRAY, 5 N-CH, 12V, SOIC, TRANSISTOR POLARITY:NPN, PNP, COLLECTOR EMITTER VOLTAGE V(BR)CEO:12V, DC COLLECTOR CURRENT:37MA, POWER DISSIPATION PD:150MW, DC CURRENT GAIN HFE:40HFE, NO. OF PINS:16PINS, PRODUCT RANGE:- ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Bipolar RF Transistors - HFA3096BZ - ODG (Origin Data Global)
Shenzhen, China
Bipolar RF Transistors
HFA3096BZ
Bipolar RF Transistors HFA3096BZ
RF TRANS 12/15V 5.5GHZ 16SOIC

RF TRANS 12/15V 5.5GHZ 16SOIC

Supplier's Site Datasheet
TXARRAY 3X NPN 2X PNP 16NSOIC - 70206668 - Allied Electronics, Inc.
Fort Worth, TX, USA
TXARRAY 3X NPN 2X PNP 16NSOIC
70206668
TXARRAY 3X NPN 2X PNP 16NSOIC 70206668
TXARRAY 3X NPN 2X PNP 16NSOIC

TXARRAY 3X NPN 2X PNP 16NSOIC

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
HFA3096BZ
Bipolar Transistors - BJT HFA3096BZ
Bipolar Transistors - BJT W/ANNEAL TXARRAY 3X NPN 2XPNP16NSOIC MIL

Bipolar Transistors - BJT W/ANNEAL TXARRAY 3X NPN 2XPNP16NSOIC MIL

Buy Now Datasheet
Bipolar Array, 5 N-Ch, 12V, Soic; Transistor Polarity Renesas - 94M7458 - Newark, An Avnet Company
Chicago, IL, United States
Bipolar Array, 5 N-Ch, 12V, Soic; Transistor Polarity Renesas
94M7458
Bipolar Array, 5 N-Ch, 12V, Soic; Transistor Polarity Renesas 94M7458
BIPOLAR ARRAY, 5 N-CH, 12V, SOIC; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:12V; DC Collector Current:37mA; Power Dissipation Pd:150mW; DC Current Gain hFE:40hFE; No. of Pins:16Pins; Product Range:- RoHS Compliant: Yes

BIPOLAR ARRAY, 5 N-CH, 12V, SOIC; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:12V; DC Collector Current:37mA; Power Dissipation Pd:150mW; DC Current Gain hFE:40hFE; No. of Pins:16Pins; Product Range:- RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - HFA3096BZ - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
HFA3096BZ
Discrete Semiconductor Products - Transistors - Bipolar (BJT) HFA3096BZ
RF TRANS 12/15V 5.5GHZ 16SOIC

RF TRANS 12/15V 5.5GHZ 16SOIC

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey RS Components, Ltd. RS Components, Ltd. Radwell International ODG (Origin Data Global) Allied Electronics, Inc. VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors RF Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 001567-HFA3096BZ HFA3096BZ-ND 2355229 2355230P 21541775 HFA3096BZ 70206668 HFA3096BZ 94M7458 HFA3096BZ
Product Name TRANSISTORS - RF Transistors (BJT) - HFA3096BZ Bipolar RF Transistors Bipolar Transistors Bipolar Transistors Transistor Bipolar RF Transistors TXARRAY 3X NPN 2X PNP 16NSOIC Bipolar Transistors - BJT Bipolar Array, 5 N-Ch, 12V, Soic; Transistor Polarity Renesas Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; PNP; 3 NPN + 2 PNP NPN; PNP NPN; PNP NPN; PNP 3 NPN + 2 PNP; NPN; PNP
Package Type SOT3; 16-SOIC "16-SOIC (0.154"", 3.90mm Width)" SOIC 16-SOIC (0.154", 3.90mm Width) SOIC TO-3
TJ 150 C (302 F) 150 C (302 F)
Power Gain 40 dB
Noise Figure 3.5 dB 3.5 dB
Unlock Full Specs
to access all available technical data