Renesas Electronics Corporation Bipolar RF Transistors HFA3046BZ

Description
RF Transistor 5 NPN 12V 65mA 8GHz 150mW Surface Mount 14-SOIC
  • Bipolar RF Transistors - HFA3046BZ-ND - DigiKey
    DigiKey
  • TRANSISTORS - RF Transistors (BJT) - HFA3046BZ - 1043246-HFA3046BZ - Win Source Electronics
    Win Source Electronics
  • Bipolar RF Transistors - HFA3046BZ - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Transistor, Npn, 12V, 0.15W, Soic; Transistor Polarity Renesas - 84AC6703 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - HFA3046BZ - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
RF Transistor 5 NPN 12V 65mA 8GHz 150mW Surface Mount 14-SOIC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Bipolar RF Transistors - HFA3046BZ-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Bipolar RF Transistors
HFA3046BZ-ND
Bipolar RF Transistors HFA3046BZ-ND
RF Transistor 5 NPN 12V 65mA 8GHz 150mW Surface Mount 14-SOIC

RF Transistor 5 NPN 12V 65mA 8GHz 150mW Surface Mount 14-SOIC

Buy Now Datasheet
TRANSISTORS - RF Transistors (BJT) - HFA3046BZ - 1043246-HFA3046BZ - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - HFA3046BZ
1043246-HFA3046BZ
TRANSISTORS - RF Transistors (BJT) - HFA3046BZ 1043246-HFA3046BZ
Manufacturer: Intersil Win Source Part Number: 1043246-HFA3046BZ Packaging: Tube/Rail Mounting: SMD (SMT) Frequency - Transition: 8GHz Transistor Polarity: 5 NPN Noise Figure (dB Typ @ f): 3.5dB @ 1GHz Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 14-SOIC Maximum Current Collector: 65mA VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Typical Gain (hFE) (Min): 40 @ 10mA, 2V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance Quantity per package: 50

Manufacturer: Intersil
Win Source Part Number: 1043246-HFA3046BZ
Packaging: Tube/Rail
Mounting: SMD (SMT)
Frequency - Transition: 8GHz
Transistor Polarity: 5 NPN
Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 14-SOIC
Maximum Current Collector: 65mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 12V
Typical Gain (hFE) (Min): 40 @ 10mA, 2V
Maximum Power Dissipation: 150mW
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance
Quantity per package: 50

Buy Now Datasheet
Bipolar RF Transistors - HFA3046BZ - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Bipolar RF Transistors
HFA3046BZ
Bipolar RF Transistors HFA3046BZ
RF TRANS 5 NPN 12V 8GHZ 14SOIC

RF TRANS 5 NPN 12V 8GHZ 14SOIC

Supplier's Site Datasheet
Transistor, Npn, 12V, 0.15W, Soic; Transistor Polarity Renesas - 84AC6703 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Transistor, Npn, 12V, 0.15W, Soic; Transistor Polarity Renesas
84AC6703
Transistor, Npn, 12V, 0.15W, Soic; Transistor Polarity Renesas 84AC6703
TRANSISTOR, NPN, 12V, 0.15W, SOIC; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:12V; DC Collector Current:34mA; Power Dissipation Pd:150mW; DC Current Gain hFE:40hFE; No. of Pins:14Pins; Operating Temperature Max:125°CRoHS Compliant: Yes

TRANSISTOR, NPN, 12V, 0.15W, SOIC; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:12V; DC Collector Current:34mA; Power Dissipation Pd:150mW; DC Current Gain hFE:40hFE; No. of Pins:14Pins; Operating Temperature Max:125°CRoHS Compliant: Yes

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
RF Bipolar Transistors
HFA3046BZ
RF Bipolar Transistors HFA3046BZ
RF Bipolar Transistors W/ANNEAL TXARRAY 3X NPN + NPN DIFF PAIR

RF Bipolar Transistors W/ANNEAL TXARRAY 3X NPN + NPN DIFF PAIR

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - HFA3046BZ - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
HFA3046BZ
Discrete Semiconductor Products - Transistors - Bipolar (BJT) HFA3046BZ
RF TRANS 5 NPN 12V 8GHZ 14SOIC

RF TRANS 5 NPN 12V 8GHZ 14SOIC

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors RF Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number HFA3046BZ-ND 1043246-HFA3046BZ HFA3046BZ 84AC6703 HFA3046BZ HFA3046BZ
Product Name Bipolar RF Transistors TRANSISTORS - RF Transistors (BJT) - HFA3046BZ Bipolar RF Transistors Transistor, Npn, 12V, 0.15W, Soic; Transistor Polarity Renesas RF Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; 5 NPN 5 NPN; NPN NPN
Package Type "14-SOIC (0.154"", 3.90mm Width)" SOT3; 14-SOIC 14-SOIC (0.154", 3.90mm Width) TO-3
Packing Method Rail; Tube; Tube/Rail Tube; Tube
TJ 150 C (302 F) 150 C (302 F)
Power Gain 40 dB
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