Renesas Electronics Corporation Single FETs, MOSFETs HAT2299WP-EL-E

Description
N-Channel 150V 14A (Ta) 25W (Tc) Surface Mount 8-WPAK (3)
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Description
N-Channel 150V 14A (Ta) 25W (Tc) Surface Mount 8-WPAK (3)
Request a Quote Datasheet

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Single FETs, MOSFETs - HAT2299WP-EL-E-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
HAT2299WP-EL-E-ND
Single FETs, MOSFETs HAT2299WP-EL-E-ND
N-Channel 150V 14A (Ta) 25W (Tc) Surface Mount 8-WPAK (3)

N-Channel 150V 14A (Ta) 25W (Tc) Surface Mount 8-WPAK (3)

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT2299WP-EL-E - 775597-HAT2299WP-EL-E - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT2299WP-EL-E
775597-HAT2299WP-EL-E
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT2299WP-EL-E 775597-HAT2299WP-EL-E
Manufacturer: Renesas Electronics America Win Source Part Number: 775597-HAT2299WP-EL- E Packaging: Reel package Operating Temperature Range: 150°C (TJ) Package: 8-PowerWDFN Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Family Name: HAT2299WP Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: 8-WPAK Channel Type Type: N Drain Source Voltage: 150V Gate Charge (Qg) (Maximum) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 710pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 25W (Tc) Rds On (Maximum) @ Id, Vgs: 110 mOhm @ 7A, 10V Alternative Parts (Cross-Reference): STL25N15F4; Si7898DP-E3; TSM650N15CR RLG; SI7898DP-T1-GE3; ECCN: EAR99 Estimated EOL Date: 2022 Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Limited

Manufacturer: Renesas Electronics America
Win Source Part Number: 775597-HAT2299WP-EL-E
Packaging: Reel package
Operating Temperature Range: 150°C (TJ)
Package: 8-PowerWDFN
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Family Name: HAT2299WP
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: 8-WPAK
Channel Type Type: N
Drain Source Voltage: 150V
Gate Charge (Qg) (Maximum) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 710pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 25W (Tc)
Rds On (Maximum) @ Id, Vgs: 110 mOhm @ 7A, 10V
Alternative Parts (Cross-Reference): STL25N15F4; Si7898DP-E3; TSM650N15CR RLG; SI7898DP-T1-GE3;
ECCN: EAR99
Estimated EOL Date: 2022
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - HAT2299WP-EL-E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
HAT2299WP-EL-E
Discrete Semiconductor Products - Transistors - FETs, MOSFETs HAT2299WP-EL-E
MOSFET N-CH 150V 14A 8WPAK

MOSFET N-CH 150V 14A 8WPAK

Supplier's Site
Sheung Wan, Hong Kong
MOSFET MOSFET WPAK - Lead Free

MOSFET MOSFET WPAK - Lead Free

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number HAT2299WP-EL-E-ND 775597-HAT2299WP-EL-E HAT2299WP-EL-E HAT2299WP-EL-E
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT2299WP-EL-E Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel
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