Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT2197R-EL-E HAT2197R-EL-E

Description
Manufacturer: Renesas Electronics America Win Source Part Number: 067808-HAT2197R-EL-E Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 8-SOP Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 16A (Ta) Max Gate Charge: 18nC @ 4.5V Max Input Capacitance: 2650pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6.7 mOhm @ 8A, 10V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Portable Devices, Computers & Computer Peripherals
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Description
Manufacturer: Renesas Electronics America Win Source Part Number: 067808-HAT2197R-EL-E Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 8-SOP Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 16A (Ta) Max Gate Charge: 18nC @ 4.5V Max Input Capacitance: 2650pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6.7 mOhm @ 8A, 10V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Portable Devices, Computers & Computer Peripherals
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Suppliers

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Product
Description
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT2197R-EL-E - 067808-HAT2197R-EL-E - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT2197R-EL-E
067808-HAT2197R-EL-E
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT2197R-EL-E 067808-HAT2197R-EL-E
Manufacturer: Renesas Electronics America Win Source Part Number: 067808-HAT2197R-EL-E Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 8-SOP Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 16A (Ta) Max Gate Charge: 18nC @ 4.5V Max Input Capacitance: 2650pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6.7 mOhm @ 8A, 10V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Portable Devices, Computers & Computer Peripherals

Manufacturer: Renesas Electronics America
Win Source Part Number: 067808-HAT2197R-EL-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-SOP
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 16A (Ta)
Max Gate Charge: 18nC @ 4.5V
Max Input Capacitance: 2650pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6.7 mOhm @ 8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Portable Devices, Computers & Computer Peripherals

Buy Now Datasheet
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - HAT2197R-EL-E - Shenzhen Shengyu Electronics Technology Limited
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Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 067808-HAT2197R-EL-E HAT2197R-EL-E-ND HAT2197R-EL-E
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT2197R-EL-E Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 30 volts
PD 2500 milliwatts
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