Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT2175H-EL-E HAT2175H-EL-E

Manufacturer: Renesas Electronics America
Win Source Part Number: 1042360-HAT2175H-EL-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 15W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: LFPAK
Dimension: SC-100, SOT-669
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 15A (Ta)
Max Gate Charge: 21nC @ 10V
Max Input Capacitance: 1445pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 42 mOhm @ 7.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance

N-Channel 100V 15A (Ta) 15W (Tc) Surface Mount LFPAK

MOSFET N-CH 100V 15A LFPAK Product overview: HAT2175H-EL-E from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 15A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 15A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-HAT2175H-EL-E can be used for catalog matching and distributor lookup.