Renesas Electronics Corporation Single FETs, MOSFETs HAT2174H-EL-E

Description
N-Channel 100V 20A (Ta) 20W (Tc) Surface Mount LFPAK
  • Single FETs, MOSFETs - HAT2174H-EL-E-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT2174H-EL-E - 1042359-HAT2174H-EL-E - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - HAT2174H-EL-E - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
N-Channel 100V 20A (Ta) 20W (Tc) Surface Mount LFPAK
Request a Quote Datasheet

Suppliers

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Product
Description
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Single FETs, MOSFETs - HAT2174H-EL-E-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
HAT2174H-EL-E-ND
Single FETs, MOSFETs HAT2174H-EL-E-ND
N-Channel 100V 20A (Ta) 20W (Tc) Surface Mount LFPAK

N-Channel 100V 20A (Ta) 20W (Tc) Surface Mount LFPAK

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT2174H-EL-E - 1042359-HAT2174H-EL-E - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT2174H-EL-E
1042359-HAT2174H-EL-E
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT2174H-EL-E 1042359-HAT2174H-EL-E
Manufacturer: Renesas Electronics America Win Source Part Number: 1042359-HAT2174H-EL- E Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 20W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: LFPAK Dimension: SC-100, SOT-669 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 20A (Ta) Max Gate Charge: 33.5nC @ 10V Max Input Capacitance: 2280pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 27 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Balance

Manufacturer: Renesas Electronics America
Win Source Part Number: 1042359-HAT2174H-EL-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 20W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: LFPAK
Dimension: SC-100, SOT-669
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 20A (Ta)
Max Gate Charge: 33.5nC @ 10V
Max Input Capacitance: 2280pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 27 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - HAT2174H-EL-E - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
HAT2174H-EL-E
Discrete Semiconductor Products - Transistors - FETs, MOSFETs HAT2174H-EL-E
MOSFET N-CH 100V 20A LFPAK

MOSFET N-CH 100V 20A LFPAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number HAT2174H-EL-E-ND 1042359-HAT2174H-EL-E HAT2174H-EL-E
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT2174H-EL-E Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type SC-100, SOT-669 SOT3; LFPAK SC-100, SOT-669
V(BR)DSS 100 volts
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