Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT2173H-EL-E HAT2173H-EL-E

Description
Manufacturer: Renesas Electronics America Win Source Part Number: 204574-HAT2173H-EL-E Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 30W (Tc) Family Name: HAT2173H Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: LFPAK Dimension: SC-100, SOT-669 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 25A (Ta) Gate-Source Threshold Voltage: 6V @ 20mA Max Gate Charge: 61nC @ 10V Max Input Capacitance: 4350pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 15 mOhm @ 12.5A, 10V Alternative Parts (Cross-Reference): PSMN012-100YS; PSMN013-100YSE; PSMN012-100YS,115; Introduction Date: May 06, 2003 ECCN: EAR99 Estimated EOL Date: 2019 Halogen Free: Not Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Renesas Electronics America Win Source Part Number: 204574-HAT2173H-EL-E Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 30W (Tc) Family Name: HAT2173H Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: LFPAK Dimension: SC-100, SOT-669 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 25A (Ta) Gate-Source Threshold Voltage: 6V @ 20mA Max Gate Charge: 61nC @ 10V Max Input Capacitance: 4350pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 15 mOhm @ 12.5A, 10V Alternative Parts (Cross-Reference): PSMN012-100YS; PSMN013-100YSE; PSMN012-100YS,115; Introduction Date: May 06, 2003 ECCN: EAR99 Estimated EOL Date: 2019 Halogen Free: Not Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT2173H-EL-E - 204574-HAT2173H-EL-E - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT2173H-EL-E
204574-HAT2173H-EL-E
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT2173H-EL-E 204574-HAT2173H-EL-E
Manufacturer: Renesas Electronics America Win Source Part Number: 204574-HAT2173H-EL-E Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 30W (Tc) Family Name: HAT2173H Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: LFPAK Dimension: SC-100, SOT-669 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 25A (Ta) Gate-Source Threshold Voltage: 6V @ 20mA Max Gate Charge: 61nC @ 10V Max Input Capacitance: 4350pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 15 mOhm @ 12.5A, 10V Alternative Parts (Cross-Reference): PSMN012-100YS; PSMN013-100YSE; PSMN012-100YS,115; Introduction Date: May 06, 2003 ECCN: EAR99 Estimated EOL Date: 2019 Halogen Free: Not Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance

Manufacturer: Renesas Electronics America
Win Source Part Number: 204574-HAT2173H-EL-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 30W (Tc)
Family Name: HAT2173H
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: LFPAK
Dimension: SC-100, SOT-669
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 25A (Ta)
Gate-Source Threshold Voltage: 6V @ 20mA
Max Gate Charge: 61nC @ 10V
Max Input Capacitance: 4350pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 15 mOhm @ 12.5A, 10V
Alternative Parts (Cross-Reference): PSMN012-100YS; PSMN013-100YSE; PSMN012-100YS,115;
Introduction Date: May 06, 2003
ECCN: EAR99
Estimated EOL Date: 2019
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - HAT2173H-EL-ETR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
HAT2173H-EL-ETR-ND
Single FETs, MOSFETs HAT2173H-EL-ETR-ND
N-Channel 100V 25A (Ta) 30W (Tc) Surface Mount LFPAK

N-Channel 100V 25A (Ta) 30W (Tc) Surface Mount LFPAK

Buy Now Datasheet
Singapore
100V 25A MOSFET Transistor
278-HAT2173H-EL-E
100V 25A MOSFET Transistor 278-HAT2173H-EL-E
MOSFET N-CH 100V 25A LFPAK Product overview: HAT2173H-EL-E from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 25A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 25A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-HAT2173H-EL-E can be used for catalog matching and distributor lookup.

MOSFET N-CH 100V 25A LFPAK Product overview: HAT2173H-EL-E from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 25A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 25A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-HAT2173H-EL-E can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET MOSFET

MOSFET MOSFET

Buy Now Datasheet
Single FETs, MOSFETs - HAT2173H-EL-E - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
HAT2173H-EL-E
Single FETs, MOSFETs HAT2173H-EL-E
MOSFET N-CH 100V 25A LFPAK

MOSFET N-CH 100V 25A LFPAK

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - HAT2173H-EL-E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
HAT2173H-EL-E
Discrete Semiconductor Products - Transistors - FETs, MOSFETs HAT2173H-EL-E
MOSFET N-CH 100V 25A LFPAK

MOSFET N-CH 100V 25A LFPAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 204574-HAT2173H-EL-E HAT2173H-EL-ETR-ND 278-HAT2173H-EL-E HAT2173H-EL-E HAT2173H-EL-E HAT2173H-EL-E
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT2173H-EL-E Single FETs, MOSFETs 100V 25A MOSFET Transistor MOSFET Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 100 volts 100 volts
PD 30000 milliwatts 30000 milliwatts 30000 milliwatts
TJ 150 C (302 F) 150 C (302 F) 150 C (302 F)
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