Renesas Electronics Corporation Single FETs, MOSFETs HAT2173H-EL-E

Description
MOSFET N-CH 100V 25A LFPAK
Request a Quote Datasheet
Description
MOSFET N-CH 100V 25A LFPAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - HAT2173H-EL-E - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
HAT2173H-EL-E
Single FETs, MOSFETs HAT2173H-EL-E
MOSFET N-CH 100V 25A LFPAK

MOSFET N-CH 100V 25A LFPAK

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT2173H-EL-E - 204574-HAT2173H-EL-E - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT2173H-EL-E
204574-HAT2173H-EL-E
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT2173H-EL-E 204574-HAT2173H-EL-E
Manufacturer: Renesas Electronics America Win Source Part Number: 204574-HAT2173H-EL-E Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 30W (Tc) Family Name: HAT2173H Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: LFPAK Dimension: SC-100, SOT-669 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 25A (Ta) Gate-Source Threshold Voltage: 6V @ 20mA Max Gate Charge: 61nC @ 10V Max Input Capacitance: 4350pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 15 mOhm @ 12.5A, 10V Alternative Parts (Cross-Reference): PSMN012-100YS; PSMN013-100YSE; PSMN012-100YS,115; Introduction Date: May 06, 2003 ECCN: EAR99 Estimated EOL Date: 2019 Halogen Free: Not Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance

Manufacturer: Renesas Electronics America
Win Source Part Number: 204574-HAT2173H-EL-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 30W (Tc)
Family Name: HAT2173H
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: LFPAK
Dimension: SC-100, SOT-669
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 25A (Ta)
Gate-Source Threshold Voltage: 6V @ 20mA
Max Gate Charge: 61nC @ 10V
Max Input Capacitance: 4350pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 15 mOhm @ 12.5A, 10V
Alternative Parts (Cross-Reference): PSMN012-100YS; PSMN013-100YSE; PSMN012-100YS,115;
Introduction Date: May 06, 2003
ECCN: EAR99
Estimated EOL Date: 2019
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - HAT2173H-EL-ETR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
HAT2173H-EL-ETR-ND
Single FETs, MOSFETs HAT2173H-EL-ETR-ND
N-Channel 100V 25A (Ta) 30W (Tc) Surface Mount LFPAK

N-Channel 100V 25A (Ta) 30W (Tc) Surface Mount LFPAK

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - HAT2173H-EL-E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
HAT2173H-EL-E
Discrete Semiconductor Products - Transistors - FETs, MOSFETs HAT2173H-EL-E
MOSFET N-CH 100V 25A LFPAK

MOSFET N-CH 100V 25A LFPAK

Supplier's Site
Sheung Wan, Hong Kong
MOSFET MOSFET

MOSFET MOSFET

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number HAT2173H-EL-E 204574-HAT2173H-EL-E HAT2173H-EL-ETR-ND HAT2173H-EL-E HAT2173H-EL-E
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT2173H-EL-E Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 100 volts 100 volts
IDSS 25000 milliamps
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