Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT2170H-EL HAT2170H-EL

Manufacturer: Renesas Electronics America Win Source Part Number: 067804-HAT2170H-EL Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 30W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: LFPAK Dimension: SC-100, SOT-669 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 45A (Ta) Gate-Source Threshold Voltage: 3V @ 1mA Max Gate Charge: 62nC @ 10V Max Input Capacitance: 4650pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.2 mOhm @ 22.5A, 10V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance