MOSFET N-CH 40V 50A LFPAK
Manufacturer: Renesas Electronics America
Win Source Part Number: 067803-HAT2169H-EL-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 30W (Tc)
Family Name: HAT2169H
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: LFPAK
Dimension: SC-100, SOT-669
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 50A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 1mA
Max Gate Charge: 45nC @ 4.5V
Max Input Capacitance: 6650pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.5 mOhm @ 25A, 10V
Alternative Parts (Cross-Reference): BUK9Y3R0-40E; BUK7Y3R5-40E; BUK7Y3R5-40E,115; BUK9Y3R0-40E,115;
Introduction Date: October 07, 2003
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2022
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance
N-Channel 40V 50A (Ta) 30W (Tc) Surface Mount LFPAK
DISCONTINUED BY MANUFACTURER, TRANSISTOR, N-CHANNEL, MOSFET, 40V, 50A, 30W, LFPAK, SURFACE MOUNT. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 40V 50A LFPAK
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Radwell International | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | HAT2169H-EL-E | 067803-HAT2169H-EL-E | HAT2169H-EL-ETR-ND | 221906189 | HAT2169H-EL-E | HAT2169H-EL-E |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT2169H-EL-E | Single FETs, MOSFETs | Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 40 volts | 40 volts | ||||
| IDSS | 50000 milliamps |
