Renesas Electronics Corporation Transistor HAT2169H-EL-E

Description
DISCONTINUED BY MANUFACTURER, TRANSISTOR, N-CHANNEL, MOSFET, 40V, 50A, 30W, LFPAK, SURFACE MOUNT. FREE 2 YEAR RADWELL WARRANTY
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Description
DISCONTINUED BY MANUFACTURER, TRANSISTOR, N-CHANNEL, MOSFET, 40V, 50A, 30W, LFPAK, SURFACE MOUNT. FREE 2 YEAR RADWELL WARRANTY
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Transistor - 221906189 - Radwell International
Willingboro, NJ, United States
Transistor
221906189
Transistor 221906189
DISCONTINUED BY MANUFACTURER, TRANSISTOR, N-CHANNEL, MOSFET, 40V, 50A, 30W, LFPAK, SURFACE MOUNT. FREE 2 YEAR RADWELL WARRANTY

DISCONTINUED BY MANUFACTURER, TRANSISTOR, N-CHANNEL, MOSFET, 40V, 50A, 30W, LFPAK, SURFACE MOUNT. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT2169H-EL-E - 067803-HAT2169H-EL-E - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT2169H-EL-E
067803-HAT2169H-EL-E
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT2169H-EL-E 067803-HAT2169H-EL-E
Manufacturer: Renesas Electronics America Win Source Part Number: 067803-HAT2169H-EL-E Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 30W (Tc) Family Name: HAT2169H Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: LFPAK Dimension: SC-100, SOT-669 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 50A (Ta) Gate-Source Threshold Voltage: 2.5V @ 1mA Max Gate Charge: 45nC @ 4.5V Max Input Capacitance: 6650pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.5 mOhm @ 25A, 10V Alternative Parts (Cross-Reference): BUK9Y3R0-40E; BUK7Y3R5-40E; BUK7Y3R5-40E,115; BUK9Y3R0-40E,115; Introduction Date: October 07, 2003 ECCN: EAR99 Country of Origin: Malaysia Estimated EOL Date: 2022 Halogen Free: Not Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance

Manufacturer: Renesas Electronics America
Win Source Part Number: 067803-HAT2169H-EL-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 30W (Tc)
Family Name: HAT2169H
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: LFPAK
Dimension: SC-100, SOT-669
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 50A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 1mA
Max Gate Charge: 45nC @ 4.5V
Max Input Capacitance: 6650pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.5 mOhm @ 25A, 10V
Alternative Parts (Cross-Reference): BUK9Y3R0-40E; BUK7Y3R5-40E; BUK7Y3R5-40E,115; BUK9Y3R0-40E,115;
Introduction Date: October 07, 2003
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2022
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - HAT2169H-EL-ETR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
HAT2169H-EL-ETR-ND
Single FETs, MOSFETs HAT2169H-EL-ETR-ND
N-Channel 40V 50A (Ta) 30W (Tc) Surface Mount LFPAK

N-Channel 40V 50A (Ta) 30W (Tc) Surface Mount LFPAK

Buy Now Datasheet
Single FETs, MOSFETs - HAT2169H-EL-E - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
HAT2169H-EL-E
Single FETs, MOSFETs HAT2169H-EL-E
MOSFET N-CH 40V 50A LFPAK

MOSFET N-CH 40V 50A LFPAK

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - HAT2169H-EL-E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
HAT2169H-EL-E
Discrete Semiconductor Products - Transistors - FETs, MOSFETs HAT2169H-EL-E
MOSFET N-CH 40V 50A LFPAK

MOSFET N-CH 40V 50A LFPAK

Supplier's Site
Sheung Wan, Hong Kong
MOSFET MOSFET

MOSFET MOSFET

Buy Now Datasheet

Technical Specifications

  Radwell International Win Source Electronics DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 221906189 067803-HAT2169H-EL-E HAT2169H-EL-ETR-ND HAT2169H-EL-E HAT2169H-EL-E HAT2169H-EL-E
Product Name Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT2169H-EL-E Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 40 volts 40 volts
PD 30000 milliwatts 30000 milliwatts
TJ 150 C (302 F) 150 C (302 F)
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