Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT2169H-EL-E HAT2169H-EL-E

Manufacturer: Renesas Electronics America
Win Source Part Number: 067803-HAT2169H-EL-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 30W (Tc)
Family Name: HAT2169H
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: LFPAK
Dimension: SC-100, SOT-669
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 50A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 1mA
Max Gate Charge: 45nC @ 4.5V
Max Input Capacitance: 6650pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.5 mOhm @ 25A, 10V
Alternative Parts (Cross-Reference): BUK9Y3R0-40E; BUK7Y3R5-40E; BUK7Y3R5-40E,115; BUK9Y3R0-40E,115;
Introduction Date: October 07, 2003
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2022
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance

N-Channel 40V 50A (Ta) 30W (Tc) Surface Mount LFPAK

MOSFET N-CH 40V 50A LFPAK