Renesas Electronics Corporation Single FETs, MOSFETs HAT2166H-EL-E

Description
N-Channel 30V 45A (Ta) 25W (Tc) Surface Mount LFPAK
Request a Quote Datasheet
Description
N-Channel 30V 45A (Ta) 25W (Tc) Surface Mount LFPAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - HAT2166H-EL-ETR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
HAT2166H-EL-ETR-ND
Single FETs, MOSFETs HAT2166H-EL-ETR-ND
N-Channel 30V 45A (Ta) 25W (Tc) Surface Mount LFPAK

N-Channel 30V 45A (Ta) 25W (Tc) Surface Mount LFPAK

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT2166H-EL-E - 1042357-HAT2166H-EL-E - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT2166H-EL-E
1042357-HAT2166H-EL-E
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT2166H-EL-E 1042357-HAT2166H-EL-E
Manufacturer: Renesas Electronics America Win Source Part Number: 1042357-HAT2166H-EL- E Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: LFPAK Dimension: SC-100, SOT-669 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 45A (Ta) Gate-Source Threshold Voltage: 2.5V @ 1mA Max Gate Charge: 27nC @ 4.5V Max Input Capacitance: 4400pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.8 mOhm @ 22.5A, 10V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance

Manufacturer: Renesas Electronics America
Win Source Part Number: 1042357-HAT2166H-EL-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 25W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: LFPAK
Dimension: SC-100, SOT-669
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 45A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 1mA
Max Gate Charge: 27nC @ 4.5V
Max Input Capacitance: 4400pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.8 mOhm @ 22.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - HAT2166H-EL-E - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
HAT2166H-EL-E
Single FETs, MOSFETs HAT2166H-EL-E
MOSFET N-CH 30V 45A LFPAK

MOSFET N-CH 30V 45A LFPAK

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - HAT2166H-EL-E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
HAT2166H-EL-E
Discrete Semiconductor Products - Transistors - FETs, MOSFETs HAT2166H-EL-E
MOSFET N-CH 30V 45A LFPAK

MOSFET N-CH 30V 45A LFPAK

Supplier's Site
Sheung Wan, Hong Kong
MOSFET MOSFET

MOSFET MOSFET

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Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number HAT2166H-EL-ETR-ND 1042357-HAT2166H-EL-E HAT2166H-EL-E HAT2166H-EL-E HAT2166H-EL-E
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT2166H-EL-E Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type SC-100, SOT-669 SOT3; LFPAK SC-100, SOT-669 SC-100, SOT-669
V(BR)DSS 30 volts 30 volts
PD 25000 milliwatts 25000 milliwatts
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