Manufacturer: Renesas Electronics America
Win Source Part Number: 067800-HAT2165H-EL-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 30W (Tc)
Family Name: HAT2165H
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: LFPAK
Dimension: SC-100, SOT-669
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 55A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 1mA
Max Gate Charge: 33nC @ 4.5V
Max Input Capacitance: 5180pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.3 mOhm @ 27.5A, 10V
Alternative Parts (Cross-Reference): PH3230S; PH3230S,115; PSMN2R6-30YLC; PSMN3R2-30YLC;
Introduction Date: April 10, 2003
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2022
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance
N-Channel 30V 55A (Ta) 30W (Tc) Surface Mount LFPAK
MOSFET N-CH 30V 55A LFPAK
MOSFET N-CH 30V 55A LFPAK
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 067800-HAT2165H-EL-E | HAT2165H-EL-ETR-ND | HAT2165H-EL-E | HAT2165H-EL-E | HAT2165H-EL-E |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT2165H-EL-E | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Single FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | ||
| V(BR)DSS | 30 volts | 30 volts | |||
| PD | 30000 milliwatts | 30000 milliwatts | |||
| TJ | 150 C (302 F) | 150 C (302 F) |
