N-Channel 30V 60A (Ta) 30W (Tc) Surface Mount LFPAK
Manufacturer: Renesas Electronics America
Win Source Part Number: 067799-HAT2164H-EL-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 30W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: LFPAK
Dimension: SC-100, SOT-669
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 60A (Ta)
Max Gate Charge: 50nC @ 4.5V
Max Input Capacitance: 7600pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.1 mOhm @ 30A, 10V
Alternative Parts (Cross-Reference): PSMN2R0-30YL; HAT2164H; RJK0301DPB-00-J0; HAT2164H-EL-E;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Balance
MOSFET N-CH 30V 60A LFPAK
MOSFET N-CH 30V 60A LFPAK
| DigiKey | Win Source Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | HAT2164H-EL-E-ND | 067799-HAT2164H-EL-E | HAT2164H-EL-E | HAT2164H-EL-E |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT2164H-EL-E | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | |
| Package Type | SC-100, SOT-669 | SOT3; LFPAK | SC-100, SOT-669 | SC-100, SOT-669 |
| V(BR)DSS | 30 volts | 30 volts | ||
| PD | 30000 milliwatts | 30000 milliwatts |
