Manufacturer: Renesas Electronics America
Win Source Part Number: 204569-HAT2160H-EL-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 30W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: LFPAK
Dimension: SC-100, SOT-669
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 60A (Ta)
Gate-Source Threshold Voltage: 2.3V @ 1mA
Max Gate Charge: 54nC @ 4.5V
Max Input Capacitance: 7750pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.6 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance
N-Channel 20V 60A (Ta) 30W (Tc) Surface Mount LFPAK
MOSFET N-CH 20V 60A LFPAK
MOSFET N-CH 20V 60A LFPAK
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 204569-HAT2160H-EL-E | HAT2160H-EL-ETR-ND | HAT2160H-EL-E | HAT2160H-EL-E | HAT2160H-EL-E |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT2160H-EL-E | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | ||
| V(BR)DSS | 20 volts | 20 volts | |||
| PD | 30000 milliwatts | 30000 milliwatts | |||
| TJ | 150 C (302 F) | 150 C (302 F) |
